Stimulated Emission from Wide-Gap Semiconductors

2011 ◽  
Vol 222 ◽  
pp. 110-113
Author(s):  
Edmundas Kuokstis

Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.

2021 ◽  
Author(s):  
Carmelita Rodà ◽  
Bastiaan B.V. Salzmann ◽  
Isabella Wagner ◽  
Yera Ussembayev ◽  
Kai Chen ◽  
...  

Nano Letters ◽  
2021 ◽  
Author(s):  
Carmelita Rodà ◽  
Bastiaan B. V. Salzmann ◽  
Isabella Wagner ◽  
Yera Ussembayev ◽  
Kai Chen ◽  
...  

2004 ◽  
Vol 69 (24) ◽  
Author(s):  
K. Kazlauskas ◽  
G. Tamulaitis ◽  
A. Žukauskas ◽  
T. Suski ◽  
P. Perlin ◽  
...  

1983 ◽  
Vol 52 (2) ◽  
pp. 677-685 ◽  
Author(s):  
Shosaku Tanaka ◽  
Takaaki Kuwata ◽  
Takehiro Hokimoto ◽  
Hiroshi Kobayashi ◽  
Hiroshi Saito

1988 ◽  
Vol 37 (4) ◽  
pp. 583-586 ◽  
Author(s):  
R Cingolani ◽  
M Ferrara ◽  
M Lugarà

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