Stimulated Emission from Wide-Gap Semiconductors
Keyword(s):
Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.
1981 ◽
Vol 39
(1)
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pp. 71-74
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1981 ◽
Vol 24-25
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pp. 605-608
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1983 ◽
Vol 52
(2)
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pp. 677-685
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