Intense laser field effects on the binding energy of impurities in semiconductors

2007 ◽  
Vol 75 (7) ◽  
Author(s):  
F. M. S. Lima ◽  
M. A. Amato ◽  
L. S. F. Olavo ◽  
O. A. C. Nunes ◽  
A. L. A. Fonseca ◽  
...  
Keyword(s):  
Binding Energy ◽  
Laser Field ◽  
Intense Laser ◽  
Intense Laser Field ◽  
Field Effects ◽  
Impurities In Semiconductors

Intense laser field and conduction band-edge nonparabolicity effects on hydrogenic impurity states of InGaN QW

2014 ◽  
Vol 29 (02) ◽  
pp. 1450246
Author(s):  
Haddou El Ghazi
Keyword(s):  
Binding Energy ◽  
Conduction Band ◽  
Laser Field ◽  
Band Edge ◽  
Intense Laser ◽  
Conduction Band Edge ◽  
Intense Laser Field ◽  
Hydrogenic Impurity ◽  
Symmetric Quantum ◽  
Trial Wavefunction

In this paper, hydrogenic impurity ground-state binding energy in unstrained wurtzite (In, Ga)N symmetric quantum well is investigated. The heterostructure is considered under the action of an intense laser field (ILF) incorporating an additional internal probe as well as the conduction band-edge nonparabolicity effect (CBENP). The variational approach is used within the framework of single band effective-mass approximation with two-parametric 1S-hydrogenic trial wavefunction. The competition effect between internal and external perturbations is also shown. Our results reveal that the binding energy is the largest for the well width around the effective Bohr radius and is strongly influenced by both parameters. Moreover, the principle effect of ILF (CBENP) is to reduce (enhance) the binding energy. It is found that the lift of the conduction band-edge can be easily eliminated by adjusting the ILF-parameter.

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