High-field splitting of the cyclotron resonance absorption in strainedp-InGaAs/GaAsquantum wells

2009 ◽  
Vol 79 (7) ◽  
Author(s):  
O. Drachenko ◽  
D. V. Kozlov ◽  
V. Ya. Aleshkin ◽  
V. I. Gavrilenko ◽  
K. V. Maremyanin ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
High Field ◽  
Resonance Absorption ◽  
Field Splitting

High-Field Anisotropic Shielding and Cyclotron-Resonance Linewidth in the Quantum Limit

1973 ◽  
Vol 7 (12) ◽  
pp. 5408-5410 ◽  
Author(s):  
Ernest E. H. Shin ◽  
Petros N. Argyres ◽  
Norman J. Morgenstern Horing ◽  
Benjamin Lax
Keyword(s):  
Cyclotron Resonance ◽  
High Field ◽  
Quantum Limit ◽  
Resonance Linewidth

Tracking Aging of Bitumen and Its Saturate, Aromatic, Resin, and Asphaltene Fractions Using High-Field Fourier Transform Ion Cyclotron Resonance Mass Spectrometry

2017 ◽  
Vol 31 (5) ◽  
pp. 4771-4779 ◽  
Author(s):  
Florian Handle ◽  
Mourad Harir ◽  
Josef Füssl ◽  
Ayşe N. Koyun ◽  
Daniel Grossegger ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Fourier Transform ◽  
Cyclotron Resonance ◽  
High Field ◽  
Ion Cyclotron Resonance ◽  
Ion Cyclotron

New Cyclotron Resonance Absorption Peaks in Germanium under High Excitation

1974 ◽  
Vol 37 (1) ◽  
pp. 114-121 ◽  
Author(s):  
Eizo Otsuka ◽  
Tyuzi Ohyama ◽  
Toshi Sanada
Keyword(s):  
Cyclotron Resonance ◽  
Resonance Absorption ◽  
High Excitation

Shallow P+-N Junction Fabrication by Plasma Immersion Ion Implantation

1991 ◽  
Vol 223 ◽  
Author(s):  
C. A. Pico ◽  
X. Y. Qian ◽  
E. Jones ◽  
M. A. Lieberman ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Ideality Factor ◽  
High Frequency ◽  
Cyclotron Resonance ◽  
High Field ◽  
Electron Cyclotron Resonance ◽  
Forward Bias ◽  
Electron Cyclotron ◽  
Significant Damage ◽  
Plasma Immersion Ion Implantation

ABSTRACTPlasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.

Cyclotron resonance absorption in trilayer graphene

2019 ◽  
Author(s):  
Momoko Onodera ◽  
Miho Arai ◽  
Satoru Masubuchi ◽  
Kei Kinoshita ◽  
Rai Moriya ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Resonance Absorption ◽  
Trilayer Graphene
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