scholarly journals Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

2009 ◽  
Vol 80 (24) ◽  
Author(s):  
D. Spirkoska ◽  
J. Arbiol ◽  
A. Gustafsson ◽  
S. Conesa-Boj ◽  
F. Glas ◽  
...  
2011 ◽  
Vol 83 (4) ◽  
Author(s):  
Martin Heiss ◽  
Sonia Conesa-Boj ◽  
Jun Ren ◽  
Hsiang-Han Tseng ◽  
Adam Gali ◽  
...  

2021 ◽  
Author(s):  
Yubin Kang ◽  
Haolin li ◽  
Jilong Tang ◽  
Huimin Jia ◽  
Xiaobing Hou ◽  
...  

2012 ◽  
Vol 28 ◽  
pp. 5-16 ◽  
Author(s):  
B. Daudin ◽  
C. Bougerol ◽  
D. Camacho ◽  
A. Cros ◽  
B. Gayral ◽  
...  

Author(s):  
T. S. Cheng ◽  
C. T. Foxon ◽  
N. J Jeffs ◽  
O. H. Hughes ◽  
B. G. Ren ◽  
...  

Films of GaN have been grown using a modified MBE method in which the active nitrogen is supplied from an RF activated plasma source. Wurtzite films grown on (0 0 1) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure; the (0 0 0 1) planes of the layers being parallel to the (0 0 1) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (1 1 1)A and (1 1 1)B oriented GaAs substrates. The improved structural properties of such films, assessed using x-ray and TEM methods, correlate with better low temperature PL performance.


Author(s):  
H. E. Jackson ◽  
S. Perera ◽  
M. A. Fickenscher ◽  
L. M. Smith ◽  
J. M. Yarrison-Rice ◽  
...  

1998 ◽  
Vol 84 (5) ◽  
pp. 2866-2870 ◽  
Author(s):  
R. C. Tu ◽  
Y. K. Su ◽  
H. J. Chen ◽  
Y. S. Huang ◽  
S. T. Chou ◽  
...  

2012 ◽  
Vol 520 (23) ◽  
pp. 6836-6840 ◽  
Author(s):  
A. Osipov ◽  
S.A. Kukushkin ◽  
N.A. Feoktistov ◽  
A. Osipova ◽  
N. Venugopal ◽  
...  

2009 ◽  
Vol 23 (09) ◽  
pp. 2233-2251 ◽  
Author(s):  
MANUEL GARCÍA-MÉNDEZ ◽  
SANTOS MORALES-RODRÍGUEZ ◽  
DONALD H. GALVÁN ◽  
ROBERTO MACHORRO

A set of AlN thin films was prepared by reactive magnetron sputtering at room temperature. The effect of oxygen impurities on the structural and optical properties of AlN films is discussed. The structural and optical properties were characterized using X-ray diffraction (XRD) and spectroscopic ellipsometry, respectively. Depending on the deposition conditions, films can grow hexagonal (würzite, P 63 m 3) or cubic (zinc-blende, Fm3m) in microstructure. From the optical measurements, the ellipsometric parameters (ψ, Δ) and the real refractive index as a function of energy were obtained. From the ellipsometric measurements, a model of Lorentz single-oscillator was employed to estimate the optical band gap, Eg. In the theoretical part, a calculation of density of states (DOS) and band structure was performed to be compared with the experimental results.


CrystEngComm ◽  
2016 ◽  
Vol 18 (25) ◽  
pp. 4720-4732 ◽  
Author(s):  
Nur Maisarah Abdul Rashid ◽  
Choonyian Haw ◽  
Weesiong Chiu ◽  
Noor Hamizah Khanis ◽  
Aliff Rohaizad ◽  
...  

Time-dependent morphological evolution analysis shows high quality crystalline α-Fe2O3 nanocubes can be precisely tuned and synthesized by a facile, green, yet straightforward strategy via a hydrothermal method.


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