Field-enhanced electron mobility by nonlinear phonon scattering of Dirac electrons in semiconducting graphene nanoribbons

Nowadays, the strained-Si technology has been used to maintain the momentum of semiconductor scaling due to its enhancement performance result from the higher mobility. In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si (101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si (101) material is made using the average momentum relaxation time method described in Ref [1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.[1]

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Erratum: “Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering” [J. Appl. Phys. 90, 4587 (2001)]

Journal of Applied Physics ◽

10.1063/1.1427643 ◽

2002 ◽

Vol 91 (1) ◽

pp. 546 ◽

Cited By ~ 1

Author(s):

Massimo V. Fischetti ◽

Deborah A. Neumayer ◽

Eduard A. Cartier

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Phonon Scattering ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Electron

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Electron-Phonon Scattering in the Presence of Soft Modes and Electron Mobility in SrTiO3 Perovskite from First Principles

Physical Review Letters ◽

10.1103/physrevlett.121.226603 ◽

2018 ◽

Vol 121 (22) ◽

Cited By ~ 37

Author(s):

Jin-Jian Zhou ◽

Olle Hellman ◽

Marco Bernardi

Keyword(s):

Electron Mobility ◽

First Principles ◽

Phonon Scattering ◽

Soft Modes ◽

Electron Phonon Scattering

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Intrinsic and Extrinsic Charge Transport in CH3NH3PbI3 Perovskites Predicted from First-Principles

Scientific Reports ◽

10.1038/srep19968 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 83

Author(s):

Tianqi Zhao ◽

Wen Shi ◽

Jinyang Xi ◽

Dong Wang ◽

Zhigang Shuai

Keyword(s):

Charge Transport ◽

Electron Mobility ◽

First Principles ◽

Phonon Scattering ◽

Single Layer ◽

Impurity Scattering ◽

Hole Mobility ◽

Single Layer Graphene ◽

Device Structures ◽

Charged Impurity Scattering

Abstract Both intrinsic and extrinsic charge transport properties of methylammonium lead triiodide perovskites are investigated from first-principles. The weak electron-phonon couplings are revealed, with the largest deformation potential (~ 5 eV) comparable to that of single layer graphene. The intrinsic mobility limited by the acoustic phonon scattering is as high as a few thousands cm2 V−1 s−1 with the hole mobility larger than the electron mobility. At the impurity density of 1018 cm−3, the charged impurity scattering starts to dominate and lowers the electron mobility to 101 cm2 V−1 s−1 and the hole mobility to 72.2 cm2 V−1 s−1. The high intrinsic mobility warrants the long and balanced diffusion length of charge carriers. With the control of impurities or defects as well as charge traps in these perovskites, enhanced efficiencies of solar cells with simplified device structures are promised.

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