Observation of field-induced charge carriers in high-mobility organic transistors of a thienothiophene-based small molecule: Electron spin resonance measurements

2011 ◽  
Vol 84 (8) ◽  
Author(s):  
Hisaaki Tanaka ◽  
Masato Kozuka ◽  
Shun-ichiro Watanabe ◽  
Hiroshi Ito ◽  
Yukihiro Shimoi ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Small Molecule ◽  
Electron Spin ◽  
High Mobility ◽  
Charge Carriers ◽  
Organic Transistors ◽  
Spin Resonance ◽  
Induced Charge

Electron Spin Resonance Observation of Gate-induced Charge Carriers in Organic Field-effect Devices Fabricated on Silicon Substrates

2007 ◽  
Vol 46 (No. 33) ◽  
pp. L792-L795 ◽  
Author(s):  
Shun-ichiro Watanabe ◽  
Keiya Ito ◽  
Hisaaki Tanaka ◽  
Hiroshi Ito ◽  
Kazuhiro Marumoto ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Field Effect ◽  
Charge Carriers ◽  
Silicon Substrates ◽  
Spin Resonance ◽  
Field Effect Devices ◽  
Induced Charge

scholarly journals Photoinduced charge carriers in conjugated polymer–fullerene composites studied with light-induced electron-spin resonance

1999 ◽  
Vol 59 (12) ◽  
pp. 8019-8025 ◽  
Author(s):  
V. Dyakonov ◽  
G. Zoriniants ◽  
M. Scharber ◽  
C. J. Brabec ◽  
R. A. J. Janssen ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Conjugated Polymer ◽  
Charge Carriers ◽  
Spin Resonance ◽  
Photoinduced Charge

Low temperature frequency dependence of the electron spin resonance absorption in heavily phosphorus-doped silicon

1970 ◽  
Vol 48 (24) ◽  
pp. 2930-2936 ◽  
Author(s):  
F. T. Hedgcock ◽  
T. W. Raudorf
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Moments ◽  
Charge Carriers ◽  
Mobile Charge ◽  
Local Moments ◽  
Spin Resonance ◽  
Doped Silicon ◽  
Pauli Paramagnetism ◽  
Phosphorus Doped

Electron spin resonance (ESR) measurements have been made on a phosphorus-doped silicon specimen (n = 1.38 × 1019/cc) in the liquid helium temperature range. A single line with a g factor of approximately 2 was observed for resonant magnetic fields of 540, 3230, and 12 590 G at 1517, 9010, and 35 200 MHz respectively. The experimentally determined magnetization is compared with the magnetizations expected from the following sources: (a) un-ionized charge carriers or local magnetic moments obeying a Curie law, (b) mobile carriers experiencing an exchange interaction with local magnetic moments, and (c) mobile charge carriers showing only Pauli paramagnetism. The magnetization derived from the ESR data exhibits a linear dependence with magnetic field and no temperature dependence. This is consistent with the Pauli paramagnetism expected for mobile charge carriers in the absence of any interaction with local moments.

Microscopic mechanisms behind the high mobility in rubrene single-crystal transistors as revealed by field-induced electron spin resonance

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
Kazuhiro Marumoto ◽  
Norimichi Arai ◽  
Hiromasa Goto ◽  
Masashi Kijima ◽  
Kouichi Murakami ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Single Crystal ◽  
Electron Spin ◽  
High Mobility ◽  
Spin Resonance
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