Direct Observation of Charge Carriers in Highly Magnesium-Doped Tris(8-hydroxyquinoline) Aluminum Thin Film by Electron Spin Resonance

2013 ◽  
Vol 52 (5S1) ◽  
pp. 05DB07 ◽  
Author(s):  
Donghyun Son ◽  
Yukihiro Shimoi ◽  
Tokushi Kizuka ◽  
Kazuhiro Marumoto
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Direct Observation ◽  
Charge Carriers ◽  
Aluminum Thin Film ◽  
Spin Resonance

scholarly journals Photoinduced charge carriers in conjugated polymer–fullerene composites studied with light-induced electron-spin resonance

1999 ◽  
Vol 59 (12) ◽  
pp. 8019-8025 ◽  
Author(s):  
V. Dyakonov ◽  
G. Zoriniants ◽  
M. Scharber ◽  
C. J. Brabec ◽  
R. A. J. Janssen ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Conjugated Polymer ◽  
Charge Carriers ◽  
Spin Resonance ◽  
Photoinduced Charge

Low temperature frequency dependence of the electron spin resonance absorption in heavily phosphorus-doped silicon

1970 ◽  
Vol 48 (24) ◽  
pp. 2930-2936 ◽  
Author(s):  
F. T. Hedgcock ◽  
T. W. Raudorf
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Moments ◽  
Charge Carriers ◽  
Mobile Charge ◽  
Local Moments ◽  
Spin Resonance ◽  
Doped Silicon ◽  
Pauli Paramagnetism ◽  
Phosphorus Doped

Electron spin resonance (ESR) measurements have been made on a phosphorus-doped silicon specimen (n = 1.38 × 1019/cc) in the liquid helium temperature range. A single line with a g factor of approximately 2 was observed for resonant magnetic fields of 540, 3230, and 12 590 G at 1517, 9010, and 35 200 MHz respectively. The experimentally determined magnetization is compared with the magnetizations expected from the following sources: (a) un-ionized charge carriers or local magnetic moments obeying a Curie law, (b) mobile carriers experiencing an exchange interaction with local magnetic moments, and (c) mobile charge carriers showing only Pauli paramagnetism. The magnetization derived from the ESR data exhibits a linear dependence with magnetic field and no temperature dependence. This is consistent with the Pauli paramagnetism expected for mobile charge carriers in the absence of any interaction with local moments.

The Roles of Several E′ Variants in Thermal Gate Oxide Reliability

1994 ◽  
Vol 338 ◽  
Author(s):  
John F. Conley ◽  
P.M. Lenahan ◽  
H.L. Evans ◽  
R.K. Lowry ◽  
T.J. Morthorst
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Vacuum Ultraviolet ◽  
Charge Injection ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Oxide Reliability ◽  
Spin Resonance ◽  
Thermally Grown

ABSTRACTWe combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin film SiO2 on Si.

Electron Spin Resonance in GaN Thin Film Doped with Fe

2007 ◽  
Vol 46 (2) ◽  
pp. 581-585 ◽  
Author(s):  
Takanari Kashiwagi ◽  
Saki Sonoda ◽  
Haruhiko Yashiro ◽  
Yujiro Ishihara ◽  
Akira Usui ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance
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