scholarly journals Half-integer quantum Hall effect of disordered Dirac fermions at a topological insulator surface

2014 ◽  
Vol 90 (16) ◽  
Author(s):  
E. J. König ◽  
P. M. Ostrovsky ◽  
I. V. Protopopov ◽  
I. V. Gornyi ◽  
I. S. Burmistrov ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Topological Insulator ◽  
Quantum Hall ◽  
Dirac Fermions ◽  
Insulator Surface ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Half integer quantum Hall effect in high mobility single layer epitaxial graphene

2009 ◽  
Vol 95 (22) ◽  
pp. 223108 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K Madiomanana ◽  
John Hankinson ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Edge states and integer quantum Hall effect in topological insulator thin films

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Song-Bo Zhang ◽  
Hai-Zhou Lu ◽  
Shun-Qing Shen
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Topological Insulator ◽  
Quantum Hall ◽  
Edge States ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

2008 ◽  
Vol 77 (11) ◽  
pp. 113707 ◽  
Author(s):  
Satoru Masubuchi ◽  
Ken-ichi Suga ◽  
Masashi Ono ◽  
Koichi Kindo ◽  
Shojiro Takeyama ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Pulse Magnet ◽  
Layer Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Integer and half-integer quantum Hall effect in silicene: Influence of an external electric field and impurities

2014 ◽  
Vol 90 (23) ◽  
Author(s):  
Kh. Shakouri ◽  
P. Vasilopoulos ◽  
V. Vargiamidis ◽  
F. M. Peeters
Keyword(s):  
Electric Field ◽  
Hall Effect ◽  
External Electric Field ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices

2010 ◽  
Vol 3 (7) ◽  
pp. 075102 ◽  
Author(s):  
Shinichi Tanabe ◽  
Yoshiaki Sekine ◽  
Hiroyuki Kageshima ◽  
Masao Nagase ◽  
Hiroki Hibino
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Graphene Devices

Theory of the Half-integer Quantum Hall Effect in Graphene

2016 ◽  
Vol 55 (11) ◽  
pp. 4830-4840 ◽  
Author(s):  
Shigeji Fujita ◽  
Akira Suzuki
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Nonresonant mechanism of impurity breakdown of integer quantum hall effect in electric field

1990 ◽  
Vol 74 (11) ◽  
pp. 1209-1212 ◽  
Author(s):  
D.G. Polyakov ◽  
M.E. Raikh
Keyword(s):  
Electric Field ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum
Sign in / Sign up

Export Citation Format

Share Document