scholarly journals Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

2016 ◽  
Vol 93 (15) ◽  
Author(s):  
G. M. Minkov ◽  
A. V. Germanenko ◽  
O. E. Rut ◽  
A. A. Sherstobitov ◽  
M. O. Nestoklon ◽  
...  
2019 ◽  
Vol 110 ◽  
pp. 95-99 ◽  
Author(s):  
G.M. Minkov ◽  
V. Ya. Aleshkin ◽  
O.E. Rut ◽  
A.A. Sherstobitov ◽  
A.V. Germanenko ◽  
...  

1995 ◽  
Vol 395 ◽  
Author(s):  
T. Uenoyama ◽  
M. Suzuki

ABSTRACTOptical gain of wurtzite GaN/AlGaN quantum wells has been studied from a first-principles calculation using the k • p method. Most of the parameters in the k • p method were determined by fitting the band structures by the first-principles calculation. Owing to the small spin-orbit splitting energies of the wurtzite GaN and AIN, the optical gain has been calculated using the 6×6 Hamiltonian for the valence band. It is found that the large hole effective masses and the small spin-orbit splitting cause the higher threshold current density of wurtzite GaN/AlGaN quantum well lasers.


Author(s):  
Voxob Rustamovich Rasulov ◽  
Rustam Yavkachovich Rasulov ◽  
Mavzurjon Xursandboyevich Qo’chqorov ◽  
Nurillo Ubaydullo o’g’li Kodirov

The polarization and frequency-polarization dependences of the linear-circular dichroism and light absorption coefficients in semiconductors of cubic symmetry, caused by vertical three-photon optical transitions between the states of the spin-orbit splitting and conduction bands, are calculated. KEY WORDS: three-photon optical transitions, spin-orbit splitting band, conduction band, linear-circular dichroism, light absorption, semiconductor.


2002 ◽  
Vol 12 (1-4) ◽  
pp. 416-419 ◽  
Author(s):  
Y.S. Gui ◽  
J. Liu ◽  
V. Daumer ◽  
C.R. Becker ◽  
H. Buhmann ◽  
...  

1997 ◽  
Vol 55 (24) ◽  
pp. 16293-16299 ◽  
Author(s):  
E. A. de Andrada e Silva ◽  
G. C. La Rocca ◽  
F. Bassani

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