Large Rashba spin–orbit splitting in gate controlled n-type modulation doped HgTe/Hg0.3Cd0.7−xMnxTe quantum wells

2002 ◽  
Vol 12 (1-4) ◽  
pp. 416-419 ◽  
Author(s):  
Y.S. Gui ◽  
J. Liu ◽  
V. Daumer ◽  
C.R. Becker ◽  
H. Buhmann ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Rashba Spin ◽  
Spin Orbit Splitting

Engineering giant Rashba spin-orbit splitting in graphene via n−p codoping

2019 ◽  
Vol 99 (19) ◽  
Author(s):  
Shifei Qi ◽  
Yulei Han ◽  
Fuming Xu ◽  
Xiaohong Xu ◽  
Zhenhua Qiao
Keyword(s):  
Spin Orbit ◽  
Orbit Splitting ◽  
Rashba Spin ◽  
Spin Orbit Splitting

scholarly journals Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms

2019 ◽  
Vol 110 ◽  
pp. 95-99 ◽  
Author(s):  
G.M. Minkov ◽  
V. Ya. Aleshkin ◽  
O.E. Rut ◽  
A.A. Sherstobitov ◽  
A.V. Germanenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting

BICHKOV–RASHBA SPIN–ORBIT SPLITTING IN KINETIC BINDING REGIME IN HgCdTe ACCUMULATION LAYERS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 301-304
Author(s):  
V. F. RADANTSEV ◽  
V. V. KRUZHAEV
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Rashba Effect ◽  
Orbit Splitting ◽  
Spin Orbit Interaction ◽  
Rashba Spin ◽  
Spin Orbit Splitting

The Rashba effect peculiarities in gated accumulation layers on the zero-gap HgCdTe are studied theoretically and experimentally. It is shown that the kinetic binding is strongly affected by spin–orbit interaction. Although the spin–orbit splitting is smaller in accumulation layers as compared with inversion ones, the "Rashba polarization", Δn/n, can achieve 100% in the kinetic confinement regime.

Analysis of Wurtzite GaN/AlGaN Quantum Well Lasers from First-Principles Calculations

1995 ◽  
Vol 395 ◽  
Author(s):  
T. Uenoyama ◽  
M. Suzuki
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
First Principles ◽  
Optical Gain ◽  
Quantum Well Lasers ◽  
First Principles Calculation ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Large Hole ◽  
Spin Orbit Splitting

ABSTRACTOptical gain of wurtzite GaN/AlGaN quantum wells has been studied from a first-principles calculation using the k • p method. Most of the parameters in the k • p method were determined by fitting the band structures by the first-principles calculation. Owing to the small spin-orbit splitting energies of the wurtzite GaN and AIN, the optical gain has been calculated using the 6×6 Hamiltonian for the valence band. It is found that the large hole effective masses and the small spin-orbit splitting cause the higher threshold current density of wurtzite GaN/AlGaN quantum well lasers.

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