scholarly journals Electrical control over perpendicular magnetization switching driven by spin-orbit torques

2016 ◽  
Vol 94 (17) ◽  
Author(s):  
X. Zhang ◽  
C. H. Wan ◽  
Z. H. Yuan ◽  
Q. T. Zhang ◽  
H. Wu ◽  
...  
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.


2020 ◽  
Author(s):  
Min-Gu Kang ◽  
Jong-Guk Choi ◽  
Jimin Jeong ◽  
Jae Yeol Park ◽  
Hyeon-Jong Park ◽  
...  

Abstract Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.


2019 ◽  
Vol 6 (3) ◽  
pp. 1900782 ◽  
Author(s):  
Qikun Huang ◽  
Yanan Dong ◽  
Xiaonan Zhao ◽  
Jing Wang ◽  
Yanxue Chen ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Min-Gu Kang ◽  
Jong-Guk Choi ◽  
Jimin Jeong ◽  
Jae Yeol Park ◽  
Hyeon-Jong Park ◽  
...  

AbstractSpin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.


APL Materials ◽  
2022 ◽  
Vol 10 (1) ◽  
pp. 011104
Author(s):  
Abhijeet Ranjan ◽  
Chun-Liang Yang ◽  
Chia-Chang Lee ◽  
Rudis Ismael Salinas Padilla ◽  
Chih-Huang Lai

2021 ◽  
Vol 118 (4) ◽  
pp. 042401
Author(s):  
Hang Xie ◽  
Abhishek Talapatra ◽  
Xin Chen ◽  
Ziyan Luo ◽  
Yihong Wu

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Guoqiang Yu ◽  
Mustafa Akyol ◽  
Pramey Upadhyaya ◽  
Xiang Li ◽  
Congli He ◽  
...  

2020 ◽  
Vol 29 (7) ◽  
pp. 078505 ◽  
Author(s):  
Zhenyi Zheng ◽  
Yue Zhang ◽  
Daoqian Zhu ◽  
Kun Zhang ◽  
Xueqiang Feng ◽  
...  

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