Mathematical models for the Shubnikov-de Haas oscillations in semiconductors are obtained at the microwave-radiation absorption and its temperature dependence. Three-dimensional image of microwave magnetoabsorption oscillations in narrow-gap semiconductors is established. Using a mathematical model, the oscillations of the microwave magnetoabsorption are considered for different values of the electromagnetic field. The results of calculations are compared with experimental data. The proposed model explains the experimental results in HgSe at different temperatures.
We analyze the critical behavior associated with spontaneous breakdown of chiral symmetry in QED3 (three-dimensional QED with four-component Dirac fermion using the SD (Schwinger-Dyson) equation. In the quenched planar approximation, we find an approximate solution such that QED3 resides in only one phase where the chiral symmetry is broken. Moreover, we predict the scaling law for the dynamical mass and chiral order parameter by an analytic study of the SD equation, which is then confirmed by solving the SD equation numerically. This scaling law is consistent with the Monte Carlo result in the quenched approximation.
Pressure-induced phase switching of Shubnikov–de Haas oscillations in the molecular Dirac fermion system
α−(BETS)2I3
