scholarly journals Current distribution in the three-dimensional random resistor network at the percolation threshold

1996 ◽  
Vol 53 (3) ◽  
pp. 2292-2297 ◽  
Author(s):  
G. George Batrouni ◽  
Alex Hansen ◽  
Brond Larson
1990 ◽  
Vol 41 (7) ◽  
pp. 4610-4618 ◽  
Author(s):  
A. B. Harris ◽  
Yigal Meir ◽  
Amnon Aharony

1992 ◽  
Vol 46 (19) ◽  
pp. 12137-12141 ◽  
Author(s):  
K. W. Yu ◽  
P. Y. Tong

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ED16 ◽  
Author(s):  
Fan-Hsuan Meng ◽  
Po-Yen Lin ◽  
Yu-Lun Chiu ◽  
Bo-Rong Huang ◽  
Chrong Jung Lin ◽  
...  

Polymers ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2658
Author(s):  
Jun Morita ◽  
Takanori Goto ◽  
Shinji Kanehashi ◽  
Takeshi Shimomura

The critical phenomena of double percolation on polybutadiene (PB)/polyethylene glycol (PEG) blends loaded with poly-3-hexylthiophene (P3HT) nanofibers is investigated. P3HT nanofibers are selectively localized in the PB phase of the PB/PEG blend, as observed by scanning force microscopy (SFM). Moreover, double percolation is observed, i.e., the percolation of the PB phase in PB/PEG blends and that of the P3HT nanofibers in the PB phase. The percolation threshold (φcI) and critical exponent (tI) of the percolation of the PB phase in PB/PEG blends are estimated to be 0.57 and 1.3, respectively, indicating that the percolation exhibits two-dimensional properties. For the percolation of P3HT nanofibers in the PB phase, the percolation threshold (φcII) and critical exponent (tII) are estimated to be 0.02 and 1.7, respectively. In this case, the percolation exhibits properties in between two and three dimensions. In addition, we investigated the dimensionality with respect to the carrier transport in the P3HT nanofiber network. From the temperature dependence of the field-effect mobility estimated by field-effect transistor (FET) measurements, the carrier transport was explained by a three-dimensional variable range hopping (VRH) model.


2000 ◽  
Vol 612 ◽  
Author(s):  
C. Pennetta ◽  
L. Reggiani ◽  
Gy. Trefán ◽  
F. Fantini ◽  
A. Scorzoni ◽  
...  

AbstractWe present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.


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