Dirac Magic and Lifshitz Transitions in AA-Stacked Twisted Multilayer Graphene

AbstractWe report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO) nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of dual-wavelength photodetectors with the hybrid configuration of these materials. For the hybrid nanostructures, ZnO nanotubes and InAs nanorods were grown vertically on the top and bottom surfaces of the graphene films by metal-organic vapor-phase epitaxy and molecular beam epitaxy, respectively. The structural, optical, and electrical characteristics of the hybrid nanostructures were investigated using transmission electron microscopy, spectral photoresponse analysis, and current–voltage measurements. Furthermore, the hybrid nanostructures were used to fabricate dual-wavelength photodetectors sensitive to both ultraviolet and mid-infrared wavelengths.

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Peridynamic Model for Microballistic Perforation of Multilayer Graphene

Theoretical and Applied Fracture Mechanics ◽

10.1016/j.tafmec.2021.102947 ◽

2021 ◽

pp. 102947

Author(s):

Stewart A. Silling ◽

Müge Fermen-Coker

Keyword(s):

Multilayer Graphene ◽

Peridynamic Model

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Synthesis and fabrication of Ni-SiO2 nanosphere-decorated multilayer graphene nanosheets composite electrode for highly sensitive amperometric determination of guaifenesin drug

Microchemical Journal ◽

10.1016/j.microc.2021.106325 ◽

2021 ◽

pp. 106325

Author(s):

Song-Jeng Huang ◽

Sathiyalingam Kannaiyan ◽

Krishnan Venkatesh ◽

Srikanth Cheemalapati ◽

Ahmed S. Haidyrah ◽

...

Keyword(s):

Composite Electrode ◽

Graphene Nanosheets ◽

Multilayer Graphene ◽

Amperometric Determination ◽

Highly Sensitive

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Multilayer graphene fundamental wave mixer under DC voltage bias

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22723 ◽

2021 ◽

Author(s):

Mingcan Cui ◽

Xiaoling Zhong ◽

Yong Fang ◽

Haoxuan Sheng ◽

Tingting Guo ◽

...

Keyword(s):

Fundamental Wave ◽

Multilayer Graphene ◽

Dc Voltage ◽

Voltage Bias

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Multilayer graphene in situ formed in carbonized waste paper with the synergism of nickel and sodium

New Journal of Chemistry ◽

10.1039/d1nj00646k ◽

2021 ◽

Author(s):

Yao Cong ◽

Qiaoran Jin ◽

Qi Huang ◽

Zijie Xu

Keyword(s):

Waste Paper ◽

Multilayer Graphene

Multilayer graphene (MLG) are in situ formed in matrix of amorphous carbons prepared from carbonized waste paper at 750 ℃. The resultant samples are systematically characterized by morphology, spectroscopy, diffractometry,...

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Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

npj 2D Materials and Applications ◽

10.1038/s41699-021-00216-1 ◽

2021 ◽

Vol 5 (1) ◽

Author(s):

Myungwoo Son ◽

Jaewon Jang ◽

Yongsu Lee ◽

Jungtae Nam ◽

Jun Yeon Hwang ◽

...

Keyword(s):

High Performance ◽

Direct Synthesis ◽

Chemical Vapor ◽

Multilayer Graphene ◽

Time To Failure ◽

Practical Applications ◽

Cu Interconnects ◽

Pressure Chemical ◽

Cu Interconnect ◽

Pure Cu

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

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