Single-Crystal Micro-Raman Spectroscopy of Phases in the Y-Ba-Cu-O Superconductor

1987 ◽  
Vol 58 (22) ◽  
pp. 2340-2342 ◽  
Author(s):  
R. J. Hemley ◽  
H. K. Mao
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Micro Raman Spectroscopy

Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

2008 ◽  
Vol 517 (1) ◽  
pp. 31-33 ◽  
Author(s):  
Dong Wang ◽  
Hiroshi Nakashima ◽  
Masanori Tanaka ◽  
Taizoh Sadoh ◽  
Masanobu Miyao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Local Strain ◽  
Micro Raman Spectroscopy

Vibrational dynamics of single-crystal YVO4studied by polarized micro-Raman spectroscopy andab initiocalculations

2012 ◽  
Vol 86 (21) ◽  
Author(s):  
Andrea Sanson ◽  
Marco Giarola ◽  
Barbara Rossi ◽  
Gino Mariotto ◽  
Enzo Cazzanelli ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Vibrational Dynamics ◽  
Micro Raman Spectroscopy

Study of field-induced phase transitions in 0.68PbMg1/3Nb2/3O3–0.32PbTiO3 relaxor single crystal by polarized micro-Raman spectroscopy

2014 ◽  
Vol 105 (10) ◽  
pp. 102909 ◽  
Author(s):  
Chao Chen ◽  
Hao Deng ◽  
Xiaobing Li ◽  
Haiwu Zhang ◽  
Ting Huang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Phase Transitions ◽  
Single Crystal ◽  
Micro Raman Spectroscopy

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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