Surface Intervalley Scattering on GaAs(110): Direct Observation with Picosecond Laser Photoemission

1989 ◽  
Vol 62 (7) ◽  
pp. 815-818 ◽  
Author(s):  
R. Haight ◽  
J. A. Silberman
Keyword(s):  
Direct Observation ◽  
Picosecond Laser ◽  
Intervalley Scattering ◽  
Laser Photoemission

scholarly journals Direct observation and manipulation of hot electrons at room temperature

2020 ◽  
Author(s):  
Hailu Wang ◽  
Fang Wang ◽  
Hui Xia ◽  
Peng Wang ◽  
Tianxin Li ◽  
...  
Keyword(s):  
Direct Observation ◽  
Real Space ◽  
Hot Electrons ◽  
Hot Electron ◽  
Performance Limit ◽  
Solar Cell Efficiency ◽  
Semiconductor Nanowire ◽  
Cell Efficiency ◽  
Intervalley Scattering ◽  
Occupied State

Abstract In modern electronics and optoelectronics, hot electron behaviors are highly concerned since they determine the performance limit of a device or system, like the associated thermal or power constraint of chips, the Shockley-Queisser limit for solar cell efficiency. Up-to-date, however, the manipulation of hot electrons is mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility, and even its path. Such a process is accomplished through the scanning-photocurrent-microscopy (SPCM) measurements by activating the intervalley-scattering events and one-dimensional charge-neutrality rule. Findings discovered here may provide a new degree of freedom in manipulating nonequilibrium electrons for both electronic and optoelectronic applications.

Sign in / Sign up

Export Citation Format

Share Document