scholarly journals Landau-Level Splitting in Graphene in High Magnetic Fields

2006 ◽  
Vol 96 (13) ◽  
Author(s):  
Y. Zhang ◽  
Z. Jiang ◽  
J. P. Small ◽  
M. S. Purewal ◽  
Y.-W. Tan ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Landau Level ◽  
High Magnetic Fields ◽  
Level Splitting ◽  
Landau Level Splitting

scholarly journals Landau level splitting in Cd3As2 under high magnetic fields

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Junzhi Cao ◽  
Sihang Liang ◽  
Cheng Zhang ◽  
Yanwen Liu ◽  
Junwei Huang ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Landau Level ◽  
High Magnetic Fields ◽  
Level Splitting ◽  
Landau Level Splitting

Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

2019 ◽  
Vol 37 (2) ◽  
pp. 021210 ◽  
Author(s):  
Stefan Schmult ◽  
Victor V. Solovyev ◽  
Steffen Wirth ◽  
Andreas Großer ◽  
Thomas Mikolajick ◽  
...  
Keyword(s):  
Landau Level ◽  
Level Splitting ◽  
Bulk Gan ◽  
Landau Level Splitting

scholarly journals Landau level splitting due to graphene superlattices

2012 ◽  
Vol 85 (23) ◽  
Author(s):  
G. Pal ◽  
W. Apel ◽  
L. Schweitzer
Keyword(s):  
Landau Level ◽  
Level Splitting ◽  
Landau Level Splitting

SPIN RESOLVED SUBBAND-LANDAU-LEVEL COUPLING AND ELECTRON-HOLE COUPLING IN InAs/AlGaSbAs QUANTUM WELL

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2905-2909
Author(s):  
TAKAHIDE YOSHIDA ◽  
KENICHI OTO ◽  
SHUICHI ISHIDA ◽  
HIROTAKA GEKA ◽  
ICHIRO SHIBASAKI
Keyword(s):  
Magnetic Fields ◽  
Quantum Well ◽  
Hall Effect ◽  
Transport Properties ◽  
Landau Level ◽  
Filling Factor ◽  
Lattice Mismatch ◽  
High Magnetic Fields ◽  
Electron Hole ◽  
Magneto Resistance

We have investigated the magneto-transport properties in InAs / AlGaSbAs quantum well (QW), where the lattice mismatch is less than 0.5%. In tilted magnetic fields, the spin-resolved subband-Landau-level coupling has been clearly observed in the magneto-resistance due to the large g -factor of this QW. An anomaly in the Hall effect has been observed at high magnetic fields of the filling factor being less than unity, which is caused by the coexistence of electrons and holes in the system.

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