scholarly journals Interaction of a dislocation pileup with {332} tilt grain boundary in bcc metals studied by MD simulations

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
N. Kvashin ◽  
N. Anento ◽  
D. Terentyev ◽  
A. Bakaev ◽  
A. Serra
2002 ◽  
Vol 82 (8) ◽  
pp. 1573-1594
Author(s):  
Geoffrey H. Campbell ◽  
Mukul Kumar ◽  
Wayne E. King ◽  
James Belak ◽  
John A. Moriarty ◽  
...  

2002 ◽  
Vol 82 (8) ◽  
pp. 1573-1594 ◽  
Author(s):  
Geoffrey H. Campbell ◽  
Mukul Kumar ◽  
Wayne E. King ◽  
James Belak ◽  
John A. Moriarty ◽  
...  

2013 ◽  
Vol 1514 ◽  
pp. 43-48
Author(s):  
Prithwish K. Nandi ◽  
V. Ajay Annamareddy ◽  
Jacob Eapen

ABSTRACTMolecular dynamics (MD) simulations are carried out to understand the mechanisms of damage production and recovery near grain boundaries in β-SiC under neutron irradiation. Our investigations show that the damage generated by radiation is reduced by the presence of a ∑9{122}[110] tilt grain boundary. Directional displacements which are averaged over an isoconfigurational ensemble are used to characterize the statistical nature of atomic mobility near the grain boundary.


Author(s):  
M.J. Kim ◽  
Y.L. Chen ◽  
R.W. Carpenter ◽  
J.C. Barry ◽  
G.H. Schwuttke

The structure of grain boundaries (GBs) in metals, semiconductors and ceramics is of considerable interest because of their influence on physical properties. Progress in understanding the structure of grain boundaries at the atomic level has been made by high resolution electron microscopy (HREM) . In the present study, a Σ=13, (510) <001>-tilt grain boundary in silicon was characterized by HREM in conjunction with digital image processing and computer image simulation techniques.The bicrystals were grown from the melt by the Czochralski method, using preoriented seeds. Specimens for TEM observations were cut from the bicrystals perpendicular to the common rotation axis of pure tilt grain boundary, and were mechanically dimpled and then ion-milled to electron transparency. The degree of misorientation between the common <001> axis of the bicrystal was measured by CBED in a Philips EM 400ST/FEG: it was found to be less than 1 mrad. HREM was performed at 200 kV in an ISI-002B and at 400 kv in a JEM-4000EX.


Author(s):  
Jean-Luc Rouvière ◽  
Alain Bourret

The possible structural transformations during the sample preparations and the sample observations are important issues in electron microscopy. Several publications of High Resolution Electron Microscopy (HREM) have reported that structural transformations and evaporation of the thin parts of a specimen could happen in the microscope. Diffusion and preferential etchings could also occur during the sample preparation.Here we report a structural transformation of a germanium Σ=13 (510) [001] tilt grain boundary that occurred in a medium-voltage electron microscopy (JEOL 400KV).Among the different (001) tilt grain boundaries whose atomic structures were entirely determined by High Resolution Electron Microscopy (Σ = 5(310), Σ = 13 (320), Σ = 13 (510), Σ = 65 (1130), Σ = 25 (710) and Σ = 41 (910), the Σ = 13 (510) interface is the most interesting. It exhibits two kinds of structures. One of them, the M-structure, has tetracoordinated covalent bonds and is periodic (fig. 1). The other, the U-structure, is also tetracoordinated but is not strictly periodic (fig. 2). It is composed of a periodically repeated constant part that separates variable cores where some atoms can have several stable positions. The M-structure has a mirror glide symmetry. At Scherzer defocus, its HREM images have characteristic groups of three big white dots that are distributed on alternatively facing right and left arcs (fig. 1). The (001) projection of the U-structure has an apparent mirror symmetry, the portions of good coincidence zones (“perfect crystal structure”) regularly separate the variable cores regions (fig. 2).


2011 ◽  
Vol 46 (12) ◽  
pp. 4162-4168 ◽  
Author(s):  
T. Mitsuma ◽  
T. Tohei ◽  
N. Shibata ◽  
T. Mizoguchi ◽  
T. Yamamoto ◽  
...  

1993 ◽  
Vol 126-128 ◽  
pp. 253-256 ◽  
Author(s):  
S. Mourelatos ◽  
N. Ralantoson ◽  
P. Delavignette ◽  
A. Hairie ◽  
F. Hairie ◽  
...  

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