A uniaxial stress apparatus for single-crystal X-ray diffraction on a four-circle diffractometer: application to silicon and diamond
1982 ◽
Vol 15
(2)
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pp. 148-153
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Keyword(s):
X Ray
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An apparatus for applying uniaxial stress to a single-crystal has been constructed. The stress is produced by turning a differential screw and is measured by a strain gauge. The device fits on a goniometer of a four-circle diffractometer and can rotate around all three axes of the goniometer without restrictions. The lattice constants of Si stressed along [111] were measured and compared with ultrasonically measured elastic constants. The internal stress parameter ξ was calculated from changes of the intensity of the 600 reflection: ξ = 0.74 ± 0.04, larger than the value generally accepted (ξ = 0.64 ± 0.04). The implications of this unexpected result are discussed.
2007 ◽
Vol 62
(1)
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pp. 1-4
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2008 ◽
Vol 39
(13)
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pp. 3141-3148
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Keyword(s):
1974 ◽
Vol 32
◽
pp. 506-507
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Keyword(s):