Application of in situ synchrotron X-ray topography to the study of a solid-phase transformation: crystallography of the transition in pure titanium

1983 ◽  
Vol 16 (6) ◽  
pp. 646-648 ◽  
Author(s):  
C. Jourdan ◽  
J. Gastaldi

With a high-temperature camera, designed for in situ synchrotron radiation X-ray topography, the crystallography of the α → β transition in titanium has been studied.

2000 ◽  
Vol 644 ◽  
Author(s):  
Y.X. Zhuang ◽  
L. Gerward ◽  
J.Z. Jiang ◽  
J.S. Olsen ◽  
Y. Zhang ◽  
...  

AbstractThe crystallization of bulk Zr48Nb8Cu14Ni12Be18metallic glass has been investigated by differential scanning calorimetry (DSC) and X-ray powder diffraction. The activation energies of glass transition and crystallization for the glass obtained using Kissinger analysis from the shift of the peak temperature in the DSC curve are 470 and 235 kJ/mol, respectively. The effect of applied pressure on crystallization is studied by in situ high-pressure and high-temperature X-ray powder diffraction using synchrotron radiation. It is found that the crystallization temperature increases with pressure having a slope of 9.5 K/GPa in the range of 0-4.4 GPa.


Materialia ◽  
2019 ◽  
Vol 5 ◽  
pp. 100220 ◽  
Author(s):  
Matthew Carl ◽  
Jesse Smith ◽  
Robert W. Wheeler ◽  
Yang Ren ◽  
Brian Van Doren ◽  
...  

1999 ◽  
Vol 14 (2) ◽  
pp. 118-121
Author(s):  
N. Mattern ◽  
A. Teresiak ◽  
T. Schubert ◽  
W. Löser ◽  
S. Doyle

The phase decomposition occurring during the heating of rapidly quenched Al–Ge–Si alloys has been investigated in situ by means of synchrotron radiation X-ray diffraction. The metastable Al–Ge phases formed in the as-quenched state transform during heating to Al and Ge. The addition of silicon decreases the transformation temperature. A Ge(Si) solid solution is indicated by a systematic change in the lattice constant of Ge as a result of the diffusion of Si from the Al matrix into the phase-separated Ge matrix.


1991 ◽  
Vol 239 ◽  
Author(s):  
Philip Kightley ◽  
Peter J Goodhew ◽  
Peter D Augustus ◽  
Robert R Bradley

ABSTRACTThe changes in defect structure caused by an anneal are studied by TEM for thin GaAs layers on Si. A low growth temperature of 450°C is always used for the first 300Å. When it is first deposited this layer contains considerable disorder which consists of planar defects, {112} epitaxy and an irregular distribution of dislocations. Annealing of the layer gives rise to a solid phase regrowth that consumes the misoriented and much of the twinned crystal and produces regular misfit dislocation arrays. Continued growth at high temperature can reduce the twin densities to below the detection limit of TEM. It is this solid phase transformation of this layer that allows good epitaxy to continue.


Sign in / Sign up

Export Citation Format

Share Document