scholarly journals Direct determination of phase from three-beam convergent-beam diffraction patterns of centrosymmetric crystals

1996 ◽  
Vol 52 (a1) ◽  
pp. C54-C54
Author(s):  
J. Etheridge ◽  
A. F. Moodie ◽  
C. J. Humphreys
2017 ◽  
Vol 179 ◽  
pp. 73-80 ◽  
Author(s):  
S.C. Hillier ◽  
E.T. Robertson ◽  
G.D. Reid ◽  
R.D. Haynes ◽  
M.D. Robertson

2011 ◽  
Vol 19 (1) ◽  
pp. 72-72 ◽  
Author(s):  
Alwyn Eades

There are two principal techniques for obtaining diffraction patterns in the transmission electron microscope (TEM). They are selected-area diffraction (SAD) and convergent-beam diffraction (CBED). CBED is quicker and easier to use, and it provides a much richer characterization of the sample. Thus, it is clear that CBED should be used in the vast majority of cases. It should be the diffraction technique that students learn first, and students should be taught to consider it the standard method of doing diffraction in the TEM.


1998 ◽  
Vol 13 (11) ◽  
pp. 3122-3134 ◽  
Author(s):  
Xiao-Dong Zhang ◽  
Kenneth H. Sandhage ◽  
Hamish L. Fraser

Analytical TEM and HREM have been used to examine the structure of BaAl2Si2O8 crystals produced within oxidized Ba–Al–Al2O3–SiO2 precursors upon annealing: (i) at ≤650 °C and (ii) up to 1650 °C. A BaAl2Si2O8 polymorph with a c-axis parameter of 15.6 Å was detected after annealing at ≤650 °C. Stacking faults and antiphase boundaries were detected within this polymorph after the 650 °C treatment. After a 15 h heat treatment at 1650 °C, convergent beam diffraction patterns and HREM confirmed that the predominant phase was β–hexacelsian. Although antiphase boundaries were absent in the β–hexacelsian crystals, dislocations and stacking faults were detected after the 1650 °C anneal. The generation of defects in BaAl2Si2O8 crystals within specimens annealed at ≤650 °C and at 1650 °C is discussed in light of prior structural analyses.


2013 ◽  
Vol 21 (2) ◽  
pp. 40-40
Author(s):  
Lydia Rivaud

Central to the operation of the transmission electron microscope (TEM) (when used with crystalline samples) is the ability to go back and forth between an image and a diffraction pattern. Although it is quite simple to go from the image to a convergent-beam diffraction pattern or from an image to a selected-area diffraction pattern (and back), I have found it useful to be able to go between image and diffraction pattern even more quickly. In the method described, once the microscope is set up, it is possible to go from image to diffraction pattern and back by turning just one knob. This makes many operations on the microscope much more convenient. It should be made clear that, in this method, neither the image nor the diffraction pattern is “ideal” (details below), but both are good enough for many necessary procedures.


2001 ◽  
Vol 7 (S2) ◽  
pp. 334-335
Author(s):  
J. Tafto

Multilayers, heterostructures, nanostructures and composites are of great interest to the materials scientists, and frequently we encounter crystals lacking centrosymmetry. Thus crystal polarity determination on a microscopic scale is becoming increasingly important in describing interface structures and the internal defects in small crystals. in many cases the polarity of a crystallite can be determined by convergent beam electron diffraction, CBED. Powerful alternatives are to monitor the electron induced x-ray emission, EDS, or electron energy losses, EELS, under channeling conditions. While the determination of the phase of the structure factors, and thus the determination of the crystal polarity, relies on many beam diffraction effects when the CBED technique is used, two-beam experiments provide information about the phase of the structure factor when localized EDS or EELS signals are detected under channeling conditions.The experimental conditions used to determine the polarity and absolute orientation from electron channeling are similar to those used in ALCHEMI experiments to locate small amounts of atoms by electron channeling.


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