Local structure study of dilute Er in III–V semiconductors by fluorescence EXAFS

1998 ◽  
Vol 5 (3) ◽  
pp. 1061-1063 ◽  
Author(s):  
H. Ofuchi ◽  
D. Kawamura ◽  
J. Tsuchiya ◽  
N. Matsubara ◽  
M. Tabuchi ◽  
...  

For understanding the luminescence of Er atoms in III–V semiconductors, OMVPE-grown InP doped with Er has been investigated by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 × 1012 Er atoms in a 1.5 mm × 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 × 1012 atoms and 1.2 × 1013 atoms of Er.

2016 ◽  
Vol 1133 ◽  
pp. 429-433
Author(s):  
Siti Nooraya Mohd Tawil ◽  
Shuichi Emura ◽  
Daivasigamani Krishnamurthy ◽  
Hajime Asahi

Local structures around gadolinium atoms in rare-earth (RE)-doped InGaGdN thin films were studied by means of fluorescence extended X-ray absorption fine structure (EXAFS) measured at the Gd LIII-edges. The samples were doped with Gd in-situ during growth by plasma-assisted molecular beam epitaxy (PAMBE). Gd LIII-edge EXAFS signal from the GaGdN, GdN and Gd foil were also measured as reference. The X-ray absorption near edge structure (XANES) spectra around Gd LIII absorption edge of InGaGdN samples observed at room temperature indicated the enhancement of intensities with the increase of Gd composition. Further EXAFS analysis inferred that the Gd atoms in InGaN were surrounded by similar atomic shells as in the case of GaGdN with the evidence indicating majority of Gd atoms substituted into Ga sites of InGaGdN. A slight elongation of bond length for the 2nd nearest-neighbor (Gd–Ga) of sample with higher Gd concentration was also observed.


1994 ◽  
Vol 33 (Part 1, No. 7A) ◽  
pp. 4090-4093 ◽  
Author(s):  
Masaki Sakurai ◽  
Salah A. Makhlouf ◽  
Kenji Sumiyama ◽  
Kimio Wakoh ◽  
Kenji Suzuki

2018 ◽  
Vol 6 (47) ◽  
pp. 24534-24549 ◽  
Author(s):  
Daniel F. Abbott ◽  
Emiliana Fabbri ◽  
Mario Borlaf ◽  
Francesco Bozza ◽  
Robin Schäublin ◽  
...  

The structural and electronic properties of rock salt-type Ni–Fe oxides are investigated under OER conditions. The inclusion of Fe in the rock-salt structure is shown to inhibit the transformation to more layered and disordered polymorphs.


2006 ◽  
Vol 45 (7) ◽  
pp. 5960-5965 ◽  
Author(s):  
Yasuhiro Yagi ◽  
Tatsuya Usui ◽  
Shigenori Shimizu ◽  
Kazuhisa Kurashige ◽  
Hiroyuki Ishibashi ◽  
...  

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