scholarly journals The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ahmad Sauffi Yusof ◽  
Zainuriah Hassan ◽  
Sidi Ould Saad Hamady ◽  
Sha Shiong Ng ◽  
Mohd Anas Ahmad ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Growth Process ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Solar Cell Application ◽  
Content Type ◽  
Light Emitting ◽  
Mocvd Growth ◽  
Gan Heterostructure

Purpose The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures. Design/methodology/approach To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 µm undoped-GaN (ud-GaN) and GaN nucleation layer, respectively, over a commercial 2” c-plane flat sapphire substrate. The InGaN layers were grown at different temperature settings ranging from 860°C to 820°C in a step of 20°C. The details of structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Findings InGaN/GaN heterostructure with indium composition up to 10.9% has been successfully grown using the MOCVD technique without any phase separation detected within the sensitivity of the instrument. Indium compositions were estimated through simulation fitting of the XRD curve and calculation of Vegard’s law from UV-Vis measurement. The thickness of the structures was determined using the Swanepoel method and the FE-SEM cross-section image. Originality/value This paper report on the effect of MOCVD growth temperature on the growth process of InGaN/GaN heterostructure, which is of interest in solid-state lighting technology, especially in light-emitting diodes and solar cell application.

Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Muhammad Esmed Alif Samsudin ◽  
Yusnizam Yusuf ◽  
Norzaini Zainal ◽  
Ahmad Shuhaimi Abu Bakar ◽  
Christian Zollner ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Design Methodology ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Content Type ◽  
Metal Organic ◽  
Dislocations Density ◽  
20 Nm ◽  
Organic Chemical Vapor Deposition

Purpose The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate. Design/methodology/approach In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison. Findings By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 × 108 cm−2. The surface of the AlN layer with that nucleation layer was smoother than its counterparts. Originality/value This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

2015 ◽  
Vol 1120-1121 ◽  
pp. 391-395 ◽  
Author(s):  
Shu Fan ◽  
Le Yu ◽  
Xiao Long He ◽  
Ping Han ◽  
Cai Chuan Wu ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Time ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Coverage Ratio ◽  
3 Dimensional ◽  
Aln Film ◽  
Metal Organic ◽  
Dimensional Growth ◽  
Organic Chemical Vapor Deposition

The AlN nucleation layer (NL) has been deposited on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). The result indicates that the growth mode of the AlN NL is in the form of 2-dimensional plane and 3-dimensional island. The proportion of 3-dimensional region increases gradually and the 2-dimensional region reduces correspondingly with the increase of growth time. The decrease of the coverage ratio of AlN grains in the 2-dimensional growth region is due to the effect of etching. AlN film with the single crystal orientation has been deposited on the optimized AlN NL.

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

2012 ◽  
Vol 1439 ◽  
pp. 109-114
Author(s):  
XinYi Chen ◽  
Alan M. C. Ng ◽  
Aleksandra B. Djurišić ◽  
Chi Chung Ling ◽  
Wai-Kin Chan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Type Layer ◽  
Growth Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Mohd Ann Amirul Zulffiqal Md Sahar ◽  
Zainuriah Hassan ◽  
Sha Shiong Ng ◽  
Way Foong Lim ◽  
Khai Shenn Lau ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Output ◽  
Emission Peak ◽  
Organic Chemical ◽  
Peak Wavelength ◽  
Content Type ◽  
Light Emitting ◽  
Near Ultraviolet

Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

2009 ◽  
Vol 94 (22) ◽  
pp. 222105 ◽  
Author(s):  
William E. Fenwick ◽  
Andrew Melton ◽  
Tianming Xu ◽  
Nola Li ◽  
Christopher Summers ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Microstructural Characterization of GaN Grown on SiC

2019 ◽  
Vol 25 (6) ◽  
pp. 1383-1393
Author(s):  
Sabyasachi Saha ◽  
Deepak Kumar ◽  
Chandan K. Sharma ◽  
Vikash K. Singh ◽  
Samartha Channagiri ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Transmission Electron ◽  
Vapor Deposition Technique ◽  
Metal Organic

AbstractGaN films have been grown on SiC substrates with an AlN nucleation layer by using a metal organic chemical vapor deposition technique. Micro-cracking of the GaN films has been observed in some of the grown samples. In order to investigate the micro-cracking and microstructure, the samples have been studied using various characterization techniques such as optical microscopy, atomic force microscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy (TEM). The surface morphology of the AlN nucleation layer is related to the stress evolution in subsequent overgrown GaN epilayers. It is determined via TEM evidence that, if the AlN nucleation layer has a rough surface morphology, this leads to tensile stresses in the GaN films, which finally results in cracking. Raman spectroscopy results also suggest this, by showing the existence of considerable tensile residual stress in the AlN nucleation layer. Based on these various observations and results, conclusions or propositions relating to the microstructure are presented.

scholarly journals Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4050 ◽  
Author(s):  
Chuan-Yang Liu ◽  
Ya-Chao Zhang ◽  
Sheng-Rui Xu ◽  
Li Jiang ◽  
Jin-Cheng Zhang ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Layer Growth ◽  
Organic Chemical ◽  
Propagation Mechanism ◽  
Nucleation Layer ◽  
Low Dislocation Density ◽  
Structural And Electrical Properties ◽  
Metal Organic

In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail. The optimal growth condition is obtained with composited AlN nucleation layers grown on a sputtered AlN template, resulting in the smooth surface morphology and superior transport properties of the heterostructures. Moreover, high crystal quality GaN material with low dislocation density has been achieved under the optimal condition. The dislocation propagation mechanism, stress relief effect in the GaN grown on sputtered AlN, and metal organic chemical vapor deposition AlN nucleation layers are revealed based on the test results. The results in this work demonstrate the great potential of AlGaN/GaN heterostructures grown on sputtered AlN and composited AlN nucleation layers for microelectronic applications.

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