Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

2016 ◽  
Vol 33 (3) ◽  
pp. 172-175 ◽  
Author(s):  
Kazimierz Drabczyk ◽  
Jaroslaw Domaradzki ◽  
Grazyna Kulesza-Matlak ◽  
Marek Lipinski ◽  
Danuta Kaczmarek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Content Type ◽  
Crystalline Silicon Solar Cells ◽  
Screen Printed

Purpose The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell. Design/methodology/approach Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements. Findings The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed. Originality/value The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

Shape-Controllable Surface Texturization for Crystalline Silicon Solar Cells

2008 ◽  
Vol 1101 ◽  
Author(s):  
Jong-San Im ◽  
Jin-Wan Jeon ◽  
Koeng Su Lim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Inductively Coupled Plasma ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Crystalline Silicon Solar Cells ◽  
Inductively Coupled ◽  
Polymer Dispersed Liquid Crystal ◽  
Polymer Dispersed

AbstractThis paper describes a new method to make surface textures for photovoltaic application. Using this method, we can make textures having various shapes. The first step is to make photo-resist (PR) molds using the polymer dispersed liquid crystal (PDLC) film. The second step is to transfer the PR molds to silicon by inductively coupled plasma etching process. The final step is a solar cell fabrication process. The structure of the solar cell is simple Al Grid/c-Si/Al back contact. The solar cells show the increase of the short circuit current (Jsc) comparing to the planar cells. By this texturing method, we can get solar cells having various textures which we want to make.

Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 426 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225–400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM 1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225-400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

2019 ◽  
Vol 36 (3) ◽  
pp. 90-94
Author(s):  
Barbara Swatowska ◽  
Piotr Panek ◽  
Dagmara Michoń ◽  
Aleksandra Drygała
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Content Type ◽  
Diffusion Parameters

Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

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