Role of nitrogen concentration in the thermal stability of the anisotropy in FeTiN thin films

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

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Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

MRS Proceedings ◽

10.1557/proc-472-331 ◽

1997 ◽

Vol 472 ◽

Cited By ~ 2

Author(s):

Dong Joon Kim ◽

Soon Pil Jeong ◽

Yong Tae Kim ◽

Jong-Wan Park

Keyword(s):

Thin Film ◽

Crystal Structure ◽

Thin Films ◽

Thermal Stability ◽

Diffusion Barrier ◽

Annealing Temperature ◽

Nitrogen Concentration ◽

Amorphous State ◽

Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

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Role of additives (X=Ti, Zr) in phase formation and thermal stability of Fe–X–N thin films

Thin Solid Films ◽

10.1016/j.tsf.2013.03.026 ◽

2013 ◽

Vol 536 ◽

pp. 39-49 ◽

Cited By ~ 8

Author(s):

Akhil Tayal ◽

Mukul Gupta ◽

Ajay Gupta ◽

M. Horisberger ◽

J. Stahn

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Phase Formation ◽

Thermal Stability Of

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Thermal stability of copper nitride thin films: The role of nitrogen migration

Journal of Applied Physics ◽

10.1063/1.3369450 ◽

2010 ◽

Vol 107 (10) ◽

pp. 103513 ◽

Cited By ~ 33

Author(s):

R. Gonzalez-Arrabal ◽

N. Gordillo ◽

M. S. Martin-Gonzalez ◽

R. Ruiz-Bustos ◽

F. Agulló-López

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Copper Nitride ◽

Thermal Stability Of

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Analysis of the role of fluorine content on the thermal stability of a-C:H:F thin films

Diamond and Related Materials ◽

10.1016/s0925-9635(01)00735-x ◽

2002 ◽

Vol 11 (3-6) ◽

pp. 1100-1105 ◽

Cited By ~ 4

Author(s):

L. Valentini ◽

E. Braca ◽

J.M. Kenny ◽

G. Fedosenko ◽

J. Engemann ◽

...

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Fluorine Content ◽

Thermal Stability Of

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Mossbauer Study of the Role of Aluminum and Chromium in Nitrogen Implanted Iron

MRS Proceedings ◽

10.1557/proc-235-509 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 2

Author(s):

M. Kopcewicz ◽

J. Jagielski ◽

A. Turos ◽

D. L. Williamson

Keyword(s):

Thermal Stability ◽

Ion Implantation ◽

Metallic Iron ◽

Conversion Electron ◽

Alloying Elements ◽

Mössbauer Study ◽

Conversion Electron Mössbauer Spectroscopy ◽

Conversion Electron Mossbauer Spectroscopy ◽

Thermal Stability Of

ABSTRACTThe role of alloying elements such as Cr and Al in the formation and stability of the nitride phases formed due to N ion implantation into metallic iron was studied by conversion electron Mössbauer spectroscopy (CEMS). The thermal stability of nitride phases upon 1 h annealing was greatly increased as a result of co-implanting either Cr or Al with N as compared to pure α-Fe implanted only with N.

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