Low-frequency noise characterization of self-aligned AlGaAs-GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz

1998 ◽  
Vol 46 (11) ◽  
pp. 1604-1613 ◽  
Author(s):  
J.-H. Shin ◽  
J. Kim ◽  
Y. Chung ◽  
J. Lee ◽  
Y. Suh ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Low Frequency ◽  
Bipolar Transistors ◽  
Corner Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characterization

Low frequency noise characterization of self‐aligned InP/InGaAs heterojunction bipolar transistors

1995 ◽  
Vol 78 (4) ◽  
pp. 2565-2567 ◽  
Author(s):  
A. Ouacha ◽  
M. Willander ◽  
R. Plana ◽  
J. Graffeuil ◽  
L. Escotte ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characterization

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  
Keyword(s):  
Technology Assessment ◽  
Low Frequency ◽  
Failure Prediction ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemt ◽  
Noise Characterization
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