Mid-infrared phase modulation via Stark effect on intersubband transitions in GaAs/GaAlAs quantum wells

1993 ◽  
Vol 29 (8) ◽  
pp. 2313-2318 ◽  
Author(s):  
E.B. Dupont ◽  
D. Delacourt ◽  
M. Papuchon
1992 ◽  
Vol 39 (11) ◽  
pp. 2646
Author(s):  
E.B. Dupont ◽  
D. Delacourt ◽  
M. Papuchon

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-179-C5-182
Author(s):  
K. BAJEMA ◽  
R. MERLIN ◽  
F.-Y. JUANG ◽  
S.-C. HONG ◽  
J. SINGH ◽  
...  

1987 ◽  
Vol 36 (2) ◽  
pp. 1300-1302 ◽  
Author(s):  
K. Bajema ◽  
R. Merlin ◽  
F.-Y. Juang ◽  
S.-C. Hong ◽  
J. Singh ◽  
...  

2014 ◽  
Vol 525 ◽  
pp. 170-176
Author(s):  
Zhao Xu Liu ◽  
Jun Zhu ◽  
Si Hua Ha

The quantum-confined Stark effect on the optical absorption of intersubband transitions in an asymmetric AlxGa1-xN/In0.3Ga0.7N/GaN quantum wells is investigated by means of the density matrix formulism. The built-in electric field generated by the piezoelectric and spontaneous polarizations competing against to the external electric fields is considered. As the result, the influences of the built-in and external electric fields on the energy potentials and the eigen stares are discussed in detail. When the positive external electric field is applied, the peak values of the absorption coefficients from 3-2, 2-1 and 3-1 transitions are reduced and moved to the lower photon energy levels. With the negative field, the exactly opposite results can be obtained. Moreover, it is indicated that the results of the wavelengths from the 3-2, 2-1 and 3-1 transitions are reduced by the positive external electric field and increased by the negative field.


2011 ◽  
Vol 25 (22) ◽  
pp. 1847-1854 ◽  
Author(s):  
SI HUA HA ◽  
SHI LIANG BAN ◽  
JUN ZHU

The quantum confined Stark effect on the optical absorption of intersubband transitions in nitride quantum wells is investigated by means of the density matrix formulism. The built-in electric field, which is caused by the piezoelectric polarization produced by the lattice mismatch and thermal strain, and by the spontaneous polarization, is taken into account. The three-energy-level system is obtained by designing a quantum-well structure composed by two barriers with different band gaps. For example, the corresponding wavelengths for 1–2, 1–3 and 2–3 transitions in an Al 0.5 Ga 0.5 N / In 0.3 Ga 0.7 N / GaN quantum well with the well width of 5 nm are calculated as 1.84 μm, 0.95 μm and 2.24 μm, respectively. Moreover, they decrease with increasing the Al composition of left barrier.


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