Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology

2001 ◽  
Vol 47 (1) ◽  
pp. 10-15 ◽  
Author(s):  
Sungkyung Park ◽  
Wonchan Kim
Keyword(s):  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Front End ◽  
Rf Front End ◽  
Noise Amplifier

scholarly journals Low Noise Amplifier Design and Performance Analysis of RF Front-End for Narrow Band Receivers

2021 ◽  
Vol 1817 (1) ◽  
pp. 012007
Author(s):  
Amgothu Laxmi Divya ◽  
Mahesh Mudavath ◽  
Ch S Ranadheer ◽  
Mohamed Afzal ◽  
R. Venkateswarlu
Keyword(s):  
Performance Analysis ◽  
Narrow Band ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Front End ◽  
Rf Front End ◽  
Amplifier Design ◽  
Noise Amplifier ◽  
And Performance

scholarly journals A Low Noise Amplifier Suitable for Biomedical Recording Analog Front-End in 65nm CMOS Technology

2019 ◽  
Vol 28 (08) ◽  
pp. 1950137
Author(s):  
R. Nagulapalli ◽  
K. Hayatleh ◽  
S. Barker ◽  
A. A. Tammam ◽  
N. Yassine ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Current Steering ◽  
Silicon Area ◽  
Fully Integrated ◽  
Front End ◽  
Transconductance Amplifier ◽  
Analog Front End ◽  
Noise Amplifier

This paper presents a fully integrated front-end, low noise amplifier (LNA), dedicated to the processing of various types of bio-medical signals, such as Electrocardiogram (ECG), Electroencephalography (EEG), Axon Action Potential (AAP). A novel noise reduction technique, for an operational transconductance amplifier (OTA), has been proposed. This adds a current steering branch parallel to the differential pair, with a view to reducing the noise contribution by the cascode current sources. Hence, this reduces the overall input-referred noise of the LNA, without adding any additional power. The proposed technique implemented in 65[Formula: see text]nm CMOS technology achieves 30 dB closed-loop voltage gain, 0.05[Formula: see text]Hz lower cut-off frequency and 100 MHz 3-dB bandwidth. It operates at 1.2[Formula: see text]V power supply and draws 1[Formula: see text][Formula: see text]A static current. The prototype described in this paper occupies 3300[Formula: see text][Formula: see text]m2 silicon area.

Sign in / Sign up

Export Citation Format

Share Document