Very low-voltage swing while high-bandwidth data transmission through 4096 bit TSVs

Author(s):  
Satoshi Takaya ◽  
Makoto Nagata ◽  
Hiroaki Ikeda
Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.


Author(s):  
Gabor Varkonyi ◽  
Jonathan J. D. McKendry ◽  
Niall McAlinden ◽  
Martin D. Dawson ◽  
Keith Mathieson

Author(s):  
Daniel J. Deleganes ◽  
Micah Barany ◽  
George Geannopoulos ◽  
Kurt Kreitzer ◽  
Anant P. Singh ◽  
...  

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