CNTFET Circuit-Based Wide Fan-In Domino Logic for Low Power Applications

Carbon nanotube field effect transistors (CNTFETs) are the best alternative option for the metal oxide semiconductor field effect transistor (MOSFET) in the ultra-deep submicron (ultra-DSM) regime. CNTFET has numerous benefits such as lower off-state current, high current density, low bias potential and better transport property as compared to MOSFET. A rolled graphene sheet-based cylindrical tube is constructed in the channel region of the CNTFET structure. In this paper, an improved domino logic (IDL) configuration is proposed for domino logic circuits to improve the different performance metrics. An extensive comparative simulation analysis is provided for the different performance metrics for different circuits to verify the novelty of the proposed IDL approach. The IDL approach saves the leakage power dissipation by 95.61% and enhances the speed by 87.10% for the 4-bit full adder circuit as compared to the best reported available domino method. The effects of the number of carbon nanotubes (CNTs), temperature, and power supply voltage variations are estimated for leakage power dissipation for the 16-input OR (OR16) gate. The reliability of different performance metrics for different circuit is calculated in terms of uncertainty by running the Monte Carlo simulations for 500 samples. Stanford University’s 32[Formula: see text]nm CNTFET model is applied for circuit simulations.

Low Power Circuit Design for Footed Quasi Resistance Scheme In 45NM VLSI Technology

Low power has arisen as a chief topic in these days and hardware enterprises. Power dissipation has become a significant thought as execution and zone of VLSI Chip plan. In this paper, a design of low power for footed quasi resistance scheme in 45nanometer VLSI technology, using appropriate standard digital gates with 45nm technology, considering footed quasi resistance technique for nanoscales is introduced. Transition of logic 1 and 0 is the main problem in the cascading circuits, this problem can solved by employing a basic inverter called as Domino logic at output.Due to the precharge propagation the power dissipation is observed in domino logic, this will be resolved using PDB (Pseudo Dynamic Buffer) model. With the help of PDB nearly 67% of power saved. Even though PDB is succeeded in precharge propagation, it fails in logic transition, this may results erroneous output during cascading. With contracting technology, power utilization can decreased and over all power of the executives on chip are the critical difficulties below 100nm because of expanded intricacy. In this paper execution of low power circuit scheme for footed quasi resistance plot in 45nm VLSI technology. In this paper we will actualize and recreate low power circuit scheme for footed quasi resistance plot in 45nm VLSI technology.

A Novel Low Power Technique for FinFET Domino OR Logic

Excessive scaling of complementary metal oxide semiconductor (CMOS) technology is the main reason of large power dissipation in electronic circuits. Very large-scale integration (VLSI) industry has chosen an alternative option known as fin-shaped field effect transistor (FinFET) technology to mitigate the large power dissipation. FinFET is a multi-gate transistor which dissipates less leakage power as compared to CMOS transistors, but it does not completely resolve the problem of power dissipation. So, leakage reduction approaches are always required to mitigate the impact of power dissipation. In this paper, cascaded leakage control transistors (CLCT) leakage reduction technique is proposed using FinFET transistors. CLCT approach is tested for basic static logic circuits like inverter, 2-input NAND and NOR gates and compared with the existing leakage reduction techniques for leakage power dissipation and delay calculations at 16 and 14 nm technology nodes using Cadence tools. CLCT approach shows the effective reduction of leakage power with minimum delay penalty. As the domino logic gates are widely used in large memories and high-speed processors therefore, CLCT approach is further utilized for footless domino logic (FLDL) and compared with the available methods at 14[Formula: see text]nm technology node. CLCT approach reduces 35.16% power dissipation as compared to the conventional domino OR logic. Temperature and multiple parallel fin variations are estimated for the domino OR logic to check its reliable operation. CLCT approach has high-noise tolerance capability in term of unity noise gain (UNG) for domino OR logic as compared to the other methods.