3D Integrated Pixel Sensor with Silicon-on-Insulator Technology for the International Linear Collider Experiment

2019 ◽  
Author(s):  
Miho Yamada ◽  
Shun Ono ◽  
Yasuo Arai ◽  
Ikuo Kurachi ◽  
Toru Tsuboyama ◽  
...  
Keyword(s):  
Linear Collider ◽  
International Linear Collider ◽  
Silicon On Insulator ◽  
Silicon On Insulator Technology ◽  
Collider Experiment

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

scholarly journals Digital low level rf control system for the International Linear Collider

2018 ◽  
Vol 21 (8) ◽  
Author(s):  
Sigit Basuki Wibowo ◽  
Toshihiro Matsumoto ◽  
Shinichiro Michizono ◽  
Takako Miura ◽  
Feng Qiu ◽  
...  
Keyword(s):  
Control System ◽  
Linear Collider ◽  
International Linear Collider ◽  
Low Level

scholarly journals Digital low level rf control system with four different intermediate frequencies for the International Linear Collider

2017 ◽  
Vol 20 (9) ◽  
Author(s):  
Sigit Basuki Wibowo ◽  
Toshihiro Matsumoto ◽  
Shinichiro Michizono ◽  
Takako Miura ◽  
Feng Qiu ◽  
...  
Keyword(s):  
Control System ◽  
Linear Collider ◽  
International Linear Collider ◽  
Low Level

THE SINGLE NEUTRAL TOP-HIGGS PRODUCTION AT ILC IN THE TC2 MODEL

2011 ◽  
Vol 26 (09) ◽  
pp. 1629-1637 ◽  
Author(s):  
YAO-BEI LIU ◽  
HUI YE ◽  
YONG-HUA CAO
Keyword(s):  
Linear Collider ◽  
International Linear Collider ◽  
Higgs Production ◽  
Production Rates ◽  
Flavor Changing ◽  
Text Production ◽  
Production Processes ◽  
Parameter Values

In the framework of the topcolor-assisted technicolor (TC2) model, we study the neutral top-Higgs [Formula: see text] production processes [Formula: see text], [Formula: see text] and [Formula: see text]. The results show that the production rates can reach the level of a few fb with reasonable parameter values. With the clean background of the flavor-changing [Formula: see text] channel, the top-Higgs events can possibly be detected at the International Linear Collider (ILC) experiments. Therefore, such neutral top-Higgs production processes offer a useful way to probe for neutral top-Higgs and test the TC2 model directly.

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