CMOS-compatible silicon nanowire based field-effect pH sensor

Author(s):  
Anran Gao ◽  
Pengfei Dai ◽  
Na Lu ◽  
Tie Li ◽  
Yuelin Wang
Materials ◽  
2018 ◽  
Vol 11 (5) ◽  
pp. 785 ◽  
Author(s):  
Duy Tran ◽  
Thuy Pham ◽  
Bernhard Wolfrum ◽  
Andreas Offenhäusser ◽  
Benjamin Thierry

2011 ◽  
Vol 21 (6) ◽  
pp. 065008 ◽  
Author(s):  
Patrick Ginet ◽  
Sho Akiyama ◽  
Nobuyuki Takama ◽  
Hiroyuki Fujita ◽  
Beomjoon Kim

Small ◽  
2014 ◽  
Vol 10 (10) ◽  
pp. 2022-2028 ◽  
Author(s):  
Na Lu ◽  
Anran Gao ◽  
Pengfei Dai ◽  
Shiping Song ◽  
Chunhai Fan ◽  
...  

2017 ◽  
Vol 56 (12) ◽  
pp. 124001 ◽  
Author(s):  
Ryoongbin Lee ◽  
Dae Woong Kwon ◽  
Sihyun Kim ◽  
Sangwan Kim ◽  
Hyun-Sun Mo ◽  
...  

Author(s):  
Wan Amirah Basyarah Z.A. ◽  
M. Nuzaihan M.N. ◽  
M.K. Md Arshad ◽  
M.F.M. Fathil ◽  
Noor Azrina Haji Talik Sisin ◽  
...  

Author(s):  
Chih-ting Lin ◽  
Che-wei Huang ◽  
Jui-ching Wang

Based on the improvements of the fabrication technologies, the dimension of the device has decreased to tens of nanometer. The nano-technology has become intriguing to integrate semiconductor technologies into bio-related applications. As the consequence, silicon nanowires (Si NWs) have been proposed to detect proteins, DNA, virus, and ions etc. However, few of previous studies consider the possibility to merge with CMOS standard process. In this work, we announced CMOS compatible technique which is used to develop polysilicon nanowire field effect transistor (poly-Si NW FET) as a chemical sensor to address this issue.


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