Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers
2012 ◽
Vol 9
(3)
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pp. 441-447
2000 ◽
Vol 44
(7)
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pp. 1335-1339
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1993 ◽
Vol 14
(12)
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pp. 569-571
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2013 ◽
Vol 10
(5)
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pp. 1231-1235
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2012 ◽
Vol 43
(11)
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pp. 894-897
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