scholarly journals Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 178976-178990
Author(s):  
Federico Alimenti ◽  
Guendalina Simoncini ◽  
Gianluca Brozzetti ◽  
Daniele Dal Maistro ◽  
Marc Tiebout
Keyword(s):  
Millimeter Wave ◽  
Noise Sources ◽  
Device Characterization ◽  
Cad Modeling ◽  
Bicmos Technology ◽  
Sige Bicmos

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

2021 ◽  
pp. 1-1
Author(s):  
Henrik Forsten ◽  
Jan H. Saijets ◽  
Mikko Kantanen ◽  
Mikko Varonen ◽  
Mehmet Kaynak ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Noise Sources ◽  
Bicmos Technology ◽  
Sige Bicmos

Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology

2011 ◽  
Vol 110-116 ◽  
pp. 5452-5456
Author(s):  
Xiao Bo Xu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Shan Shan Qin ◽  
Jiang Tao Qu
Keyword(s):  
Millimeter Wave ◽  
Analytical Expression ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Transit Frequency

An analytical expression for collector resistance of a novel vertical SiGe partially-depleted accumulation-subcollector HBT on thin SOI is obtained. Supported by simulation result, the resistance decreases quickly with the increase of substrate-collector bias and improves the transit frequency dramatically. The model is found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.

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