2014 IEEE International Electron Devices Meeting
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222
(FIVE YEARS 0)

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20
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Published By IEEE

9781479980017
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High-precision wafer-level Cu-Cu bonding for 3DICs

2014 ◽  
Author(s):  
Masashi Okada ◽  
Isao Sugaya ◽  
Hajime Mitsuishi ◽  
Hidehiro Maeda ◽  
Toshimasa Shimoda ◽  
...  
Keyword(s):  
High Precision ◽  
Wafer Level ◽  
Cu Bonding

Gated and STI defined ESD diodes in advanced bulk FinFET technologies

2014 ◽  
Author(s):  
S.-H. Chen ◽  
D. Linten ◽  
J.-W. Lee ◽  
M. Scholz ◽  
G. Hellings ◽  
...  

Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs

2014 ◽  
Author(s):  
S. H. Shin ◽  
M. Masuduzzaman ◽  
M. A. Wahab ◽  
K. Maize ◽  
J. J. Gu ◽  
...  
Keyword(s):  
Direct Observation ◽  
Self Heating ◽  
Nanowire Mosfets

Multiple breakdown phenomena and modeling for non-uniform dielectric systems

2014 ◽  
Author(s):  
Ernest Wu ◽  
Baozhen Li ◽  
James H. Stathis ◽  
Ravi Achanta
Keyword(s):  
Multiple Breakdown

MOS Capacitor Deep Trench Isolation for CMOS image sensors

2014 ◽  
Author(s):  
N. Ahmed ◽  
F. Roy ◽  
G-N. Lu ◽  
B. Mamdy ◽  
J-P. Carrere ◽  
...  
Keyword(s):  
Image Sensors ◽  
Mos Capacitor ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation

A new surface potential-based compact model for a-IGZO TFTs in RFID applications

2014 ◽  
Author(s):  
Zhiwei Zong ◽  
Ling Li ◽  
Jin Jang ◽  
Zhigang Li ◽  
Nianduan Lu ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model ◽  
Rfid Applications
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