2014 IEEE International Electron Devices Meeting
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222
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20
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Published By IEEE

9781479980017
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High-precision wafer-level Cu-Cu bonding for 3DICs

2014 ◽  
Author(s):  
Masashi Okada ◽  
Isao Sugaya ◽  
Hajime Mitsuishi ◽  
Hidehiro Maeda ◽  
Toshimasa Shimoda ◽  
...  
Keyword(s):  
High Precision ◽  
Wafer Level ◽  
Cu Bonding

Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation

2014 ◽  
Author(s):  
C. Kothandaraman ◽  
S. Cohen ◽  
C. Parks ◽  
J. Golz ◽  
K. Tunga ◽  
...  
Keyword(s):  
Through Silicon Via ◽  
Close Proximity ◽  
Ion Penetration

Gated and STI defined ESD diodes in advanced bulk FinFET technologies

2014 ◽  
Author(s):  
S.-H. Chen ◽  
D. Linten ◽  
J.-W. Lee ◽  
M. Scholz ◽  
G. Hellings ◽  
...  

Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs

2014 ◽  
Author(s):  
S. H. Shin ◽  
M. Masuduzzaman ◽  
M. A. Wahab ◽  
K. Maize ◽  
J. J. Gu ◽  
...  
Keyword(s):  
Direct Observation ◽  
Self Heating ◽  
Nanowire Mosfets

Multiple breakdown phenomena and modeling for non-uniform dielectric systems

2014 ◽  
Author(s):  
Ernest Wu ◽  
Baozhen Li ◽  
James H. Stathis ◽  
Ravi Achanta
Keyword(s):  
Multiple Breakdown

MOS Capacitor Deep Trench Isolation for CMOS image sensors

2014 ◽  
Author(s):  
N. Ahmed ◽  
F. Roy ◽  
G-N. Lu ◽  
B. Mamdy ◽  
J-P. Carrere ◽  
...  
Keyword(s):  
Image Sensors ◽  
Mos Capacitor ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation

A new surface potential-based compact model for a-IGZO TFTs in RFID applications

2014 ◽  
Author(s):  
Zhiwei Zong ◽  
Ling Li ◽  
Jin Jang ◽  
Zhigang Li ◽  
Nianduan Lu ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model ◽  
Rfid Applications

Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme

2014 ◽  
Author(s):  
Hsinyu Tsai ◽  
Hiroyuki Miyazoe ◽  
Josephine B. Chang ◽  
Jed Pitera ◽  
Chi-Chun Liu ◽  
...  
Keyword(s):  
Self Assembly ◽  
Electrical Characterization

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

2014 ◽  
Author(s):  
P. Chevalier ◽  
G. Avenier ◽  
G. Ribes ◽  
A. Montagne ◽  
E. Canderle ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Gate Oxide ◽  
High Q ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Metal Layers
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