A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices

Silicon ◽  
2017 ◽  
Vol 10 (4) ◽  
pp. 1645-1652 ◽  
Author(s):  
N. P. Maity ◽  
Reshmi Maity ◽  
S. Baishya
Keyword(s):  
Current Model ◽  
Tunneling Current ◽  
Mos Devices ◽  
High K ◽  
High K Dielectric

A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

2016 ◽  
Vol 95 ◽  
pp. 24-32 ◽  
Author(s):  
Niladri Pratap Maity ◽  
Reshmi Maity ◽  
R.K. Thapa ◽  
Srimanta Baishya
Keyword(s):  
Current Density ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Density Model ◽  
Mos Devices ◽  
High K ◽  
High K Dielectric

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

2017 ◽  
Vol 897 ◽  
pp. 571-574 ◽  
Author(s):  
Vidya Naidu ◽  
Sivaprasad Kotamraju
Keyword(s):  
Switching Frequency ◽  
Power Losses ◽  
Switching Power ◽  
Mos Devices ◽  
High K ◽  
High Switching Frequency ◽  
Switching Characteristics ◽  
High K Dielectric ◽  
Current Duration ◽  
Physics Based Simulation

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.

High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

2007 ◽  
Vol 253 (19) ◽  
pp. 8184-8191 ◽  
Author(s):  
M. Filipescu ◽  
N. Scarisoreanu ◽  
V. Craciun ◽  
B. Mitu ◽  
A. Purice ◽  
...  
Keyword(s):  
Mos Devices ◽  
High K ◽  
High K Dielectric

The Influence of High-k Material/SiO2 Gate Stacks on Direct Gate Tunneling Current of Cylindrical Surrounding-Gate MOSFETs

2016 ◽  
Vol 709 ◽  
pp. 19-22 ◽  
Author(s):  
Fatimah A. Noor ◽  
Christoforus Bimo ◽  
Khairurrijal
Keyword(s):  
Tunneling Current ◽  
The Self ◽  
Gate Stacks ◽  
High K ◽  
Self Consistent ◽  
Surrounding Gate ◽  
Gate Tunneling ◽  
High K Materials ◽  
High K Dielectric ◽  
Quantum Perturbation Theory

In this paper, we present a model of gate tunneling current in cylindrical surrounding-gate MOSFETs through dual layer high-k dielectric/SiO2 stacks. The model was derived under a quantum perturbation theory by taking into account both structural and electrical confinement effects. The influences of high-k materials and SiO2 thickness on the gate tunneling current have been studied. The calculated results show that the HfO2 is the most effective high-k material to decrease the gate tunneling current. It is also shown that the gate tunneling current is reduced with the SiO2 thickness. In addition, the obtained tunneling currents are fitted well with those obtained under the self-consistent calculation.

Capacitance-voltage characteristics measured through pulse technique on high- k dielectric MOS devices

Vacuum ◽  
2017 ◽  
Vol 140 ◽  
pp. 19-23
Author(s):  
Qifeng Lu ◽  
Yanfei Qi ◽  
Ce Zhou Zhao ◽  
Chun Zhao ◽  
Stephen Taylor ◽  
...  
Keyword(s):  
Pulse Technique ◽  
Mos Devices ◽  
High K ◽  
Capacitance Voltage ◽  
High K Dielectric
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