Hadrontherapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

2011 ◽  
Author(s):  
Mohamed Bouterfa ◽  
Khaled Aouadi ◽  
Damien Bertrand ◽  
Benoit Olbrechts ◽  
Romain Delamare ◽  
...  
Keyword(s):  
Type Silicon ◽  
Strip Detectors ◽  
Silicon Strip Detectors ◽  
P Type ◽  
New Generation ◽  
Beam Monitoring

VALIDATION OF A NOVEL ULTRA-THIN SILICON STRIP DETECTOR FOR HADRON THERAPY BEAM MONITORING

2013 ◽  
Vol 22 (09) ◽  
pp. 1340018 ◽  
Author(s):  
MOHAMED BOUTERFA ◽  
DENIS FLANDRE
Keyword(s):  
Fabrication Process ◽  
The Novel ◽  
Low Leakage ◽  
Hadron Therapy ◽  
Low Leakage Current ◽  
Strip Detectors ◽  
Silicon Strip Detectors ◽  
Application Requirements ◽  
Electrical Characterizations ◽  
Beam Monitoring

For precise treatment purposes in hadron therapy, the beam has to be monitored in real time without being degraded. For the first time, silicon strip detectors have been fabricated over an area as large as 20.25 cm2 with an ultra low thickness of 20 or 10 μm in order to reduce the material budget and hence the beam degradation provoked by the sensor. In this work, we describe the novel design and its fabrication process. Afterwards, we present the first electrical characterizations compared to the application requirements. The novel devices and their fabrication process are validated through measurements and simulations. A low strip-to-strip behavior variation is demonstrated as well as a very good interstrip insulation and a very low leakage current. These novel fabricated devices constitute a very promising technology for future hadron therapy beam monitoring.

scholarly journals Thin silicon strip detectors for beam monitoring in Micro-beam Radiation Therapy

2015 ◽  
Vol 10 (11) ◽  
pp. P11007-P11007 ◽  
Author(s):  
M. Povoli ◽  
E. Alagoz ◽  
A. Bravin ◽  
I. Cornelius ◽  
E. Bräuer-Krisch ◽  
...  
Keyword(s):  
Radiation Therapy ◽  
Beam Radiation ◽  
Strip Detectors ◽  
Silicon Strip Detectors ◽  
Thin Silicon ◽  
Beam Monitoring

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type
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