VALIDATION OF A NOVEL ULTRA-THIN SILICON STRIP DETECTOR FOR HADRON THERAPY BEAM MONITORING

2013 ◽  
Vol 22 (09) ◽  
pp. 1340018 ◽  
Author(s):  
MOHAMED BOUTERFA ◽  
DENIS FLANDRE
Keyword(s):  
Fabrication Process ◽  
The Novel ◽  
Low Leakage ◽  
Hadron Therapy ◽  
Low Leakage Current ◽  
Strip Detectors ◽  
Silicon Strip Detectors ◽  
Application Requirements ◽  
Electrical Characterizations ◽  
Beam Monitoring

For precise treatment purposes in hadron therapy, the beam has to be monitored in real time without being degraded. For the first time, silicon strip detectors have been fabricated over an area as large as 20.25 cm2 with an ultra low thickness of 20 or 10 μm in order to reduce the material budget and hence the beam degradation provoked by the sensor. In this work, we describe the novel design and its fabrication process. Afterwards, we present the first electrical characterizations compared to the application requirements. The novel devices and their fabrication process are validated through measurements and simulations. A low strip-to-strip behavior variation is demonstrated as well as a very good interstrip insulation and a very low leakage current. These novel fabricated devices constitute a very promising technology for future hadron therapy beam monitoring.

scholarly journals Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

2017 ◽  
Vol 897 ◽  
pp. 63-66
Author(s):  
Selsabil Sejil ◽  
Loic Lalouat ◽  
Mihai Lazar ◽  
Davy Carole ◽  
Christian Brylinski ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Low Leakage ◽  
Forward Current ◽  
Low Leakage Current ◽  
Current Densities ◽  
P Type ◽  
Electrical Characterizations ◽  
Very High

This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p+ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p++ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×1020 at.cm-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electrical measurements show a bipolar behaviour, and very high sustainable forward current densities ≥ 3 kA.cm-2, preserving a low leakage current density in reverse bias. These measurements were obtained on structures without any passivation and no edge termination.

MICROSTRUCTURE AND PROPERTIES OF Sm-DOPED BaTiO3 SPUTTERED FILMS: EFFECTS OF POST-ANNEALINGS AND DOPANT CONTENT

2011 ◽  
Vol 25 (11) ◽  
pp. 1559-1565
Author(s):  
C. H. WU ◽  
J. P. CHU ◽  
S. F. WANG ◽  
W. Z. CHANG
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Dopant Content ◽  
Si Substrates ◽  
Sputtered Films ◽  
Annealing Temperatures ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Electrical Characterizations ◽  
Sputtering System

Sm-doped BaTiO 3 thin films with ~200 nm thickness fabricated by rf magnetron sputtering system onto Pt/Ti/SiO 2/ Si substrates have been investigated. The effects of postannealing and the dopant content in a range of 0.1 to 2.2 at.% on microstructure and electrical properties were studied. The films were found to be amorphous in the as-deposited state and became fully crystallized after annealing at 750°C and above. The addition of Sm in the BaTiO 3 films resulted in the inhibition of grain growth. Electrical characterizations show that the dielectric permittivity increased with increasing annealing temperatures and the 2.2% Sm-doped film had the low leakage current of 1.29×10-9 A at an applied electric field of 100 KV/cm.

Chemical Etching and Post-Annealing for High Performance CdZnTe Strip Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
Z. Q. Shi ◽  
C. M. Stahle ◽  
P. Shu
Keyword(s):  
Leakage Current ◽  
Chemical Etching ◽  
High Performance ◽  
Wire Bonding ◽  
High Yield ◽  
Low Leakage ◽  
Post Annealing ◽  
Low Leakage Current ◽  
Strip Detectors ◽  
Critical Issues

AbstractOne of the critical issues in CdZnTe detector fabrication is the surface treatment. This will not only affect the electrical properties, such as leakage current, but also influence the physical properties, such as smoothness and adhesion between the metal and the semiconductor. The latter will determine the wire bonding yield. Historically, there has been a problem in achieving both low leakage current and excellent wire bonding yield. In this paper, we report our new approach to fabricate high performance doubled sided CdZnTe strip detectors. The new surface treatments involve chemical etching and post-annealing. The leakage current, interstrip resistance and energy resolution were studied as a function of different etchants/time and post-annealing temperature. It was found that a chemical etch with bromine in ethylene glycol (Br/EG) is suitable for the double sided strip detector process. Keeping a relatively smooth surface is critical for achieving a high yield of good strips. To improve the adhesion of the metal to CdZnTe for wire bonding, the detectors were annealed from 100 to 175°C for 10 hours. It has been observed that after annealing, not only has the strip leakage current decreased, but the interstrip resistance is increased for a temperature less than 150°C.

scholarly journals Thin silicon strip detectors for beam monitoring in Micro-beam Radiation Therapy

2015 ◽  
Vol 10 (11) ◽  
pp. P11007-P11007 ◽  
Author(s):  
M. Povoli ◽  
E. Alagoz ◽  
A. Bravin ◽  
I. Cornelius ◽  
E. Bräuer-Krisch ◽  
...  
Keyword(s):  
Radiation Therapy ◽  
Beam Radiation ◽  
Strip Detectors ◽  
Silicon Strip Detectors ◽  
Thin Silicon ◽  
Beam Monitoring

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

scholarly journals Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 2932
Author(s):  
Stergios Tsigaridas ◽  
Silvia Zanettini ◽  
Manuele Bettelli ◽  
Nicola Sarzi Amadè ◽  
Davide Calestani ◽  
...  
Keyword(s):  
Direct Detection ◽  
X Rays ◽  
Single Chip ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Fine Pitch ◽  
Pixel Sensors ◽  
Fabrication Procedure ◽  
Vertical Bridgman ◽  
Stable Performance

Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 m and thickness of 1 mm and 2 mm. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below 106 photons mm−2s−1.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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