This paper presents the development of 1700V-rated 4H-SiC JBS diodes in the state-of-the-art 6-inch SiC-dedicated foundry, NY-PEMC (New York- Power Electronics Manufacturing Consortium). The critical considerations in developing the SiC JBS diode including the cell optimization, edge termination design, process flow, and unit process developments are discussed in this paper. Static device performances such as forward conduction and reverse blocking behaviors of fabricated 1700V, 20A-rated JBS diode are presented.
