A Ka-band ultra-compact low-noise MMIC amplifier

2021 ◽

pp. 1-7

Author(s):

Anton Sieganschin ◽

Thomas Jaschke ◽

Arne F. Jacob

Keyword(s):

Insertion Loss ◽

Printed Circuit Board ◽

Noise Figure ◽

Low Noise ◽

Single Band ◽

Circuit Board ◽

Dual Band ◽

Ka Band ◽

Compression Properties ◽

The Individual

Abstract This contribution deals with a frontend for interleaved receive (Rx)-/transmit (Tx)-integrated phased arrays at K-/Ka-band. The circuit is realized in printed circuit board technology and feeds dual-band Rx/Tx- and single-band Tx-antenna elements. The dual-band element feed is composed of a substrate-integrated waveguide (SIW) diplexer with low insertion loss, a low-noise amplifier (LNA), a bandpass filter, and several passive transitions. The compression properties of the LNA are identified through two-tone measurements. The results dictate the maximum allowable output power of the power amplifier. The single band feed consists of a SIW with several transitions. Simulation and measurement results of the individual components are presented. The frontend is assembled and measured. It exhibits an Rx noise figure of 2 dB, a Tx insertion loss of ~ 2.9 dB, and an Rx/Tx-isolation of 70 dB. The setup represents the unit cell of a full array and thus complies with the required half-wave spacing at both Rx and Tx.

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A monolithic Ka-band HEMT low-noise amplifier

10.1109/mwsym.1988.22023 ◽

2003 ◽

Cited By ~ 10

Author(s):

C. Yuen ◽

C. Nishimoto ◽

M. Glenn ◽

Y.C. Pao ◽

S. Bandy ◽

...

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Ka Band ◽

Noise Amplifier

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High-performance Ka-band and V-band HEMT low-noise amplifiers

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.17390 ◽

1988 ◽

Vol 36 (12) ◽

pp. 1598-1603 ◽

Cited By ~ 11

Author(s):

K.H.G. Duh ◽

Pane-Chane Chao ◽

P.M. Smith ◽

L.F. Lester ◽

B.R. Lee ◽

...

Keyword(s):

High Performance ◽

Low Noise ◽

Low Noise Amplifiers ◽

Ka Band ◽

V Band

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A Full Ka-Band GaN-on-Si Low-Noise Amplifier

2020 50th European Microwave Conference (EuMC) ◽

10.23919/eumc48046.2021.9337964 ◽

2021 ◽

Author(s):

Dristy Parveg ◽

Mikko Varonen ◽

Mikko Kantanen

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Ka Band ◽

Noise Amplifier ◽

Gan On Si

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High Linearity Ka-band GaN Hemt Low Noise Amplifier

10.1109/ictc52510.2021.9621019 ◽

2021 ◽

Author(s):

Ji-Seung Seo ◽

Ji-Hye Hwang ◽

Ki-Jin Kim ◽

Gwang-Ho Ahn

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Ka Band ◽

Gan Hemt ◽

High Linearity ◽

Noise Amplifier

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Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Electronics ◽

10.3390/electronics9010150 ◽

2020 ◽

Vol 9 (1) ◽

pp. 150 ◽

Cited By ~ 1

Author(s):

Lorenzo Pace ◽

Sergio Colangeli ◽

Walter Ciccognani ◽

Patrick Ettore Longhi ◽

Ernesto Limiti ◽

...

Keyword(s):

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Gate Length ◽

Small Signal ◽

Linear Measurements ◽

Ka Band ◽

Noise Amplifier ◽

Gan On Si ◽

Noise Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

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