Based on the BEM of Internal Electric Field Simulation of Shunt Dry Reactor

AbstractConstruction of Z-scheme heterostructure is of great significance for realizing efficient photocatalytic water splitting. However, the conscious modulation of Z-scheme charge transfer is still a great challenge. Herein, interfacial Mo-S bond and internal electric field modulated Z-scheme heterostructure composed by sulfur vacancies-rich ZnIn2S4 and MoSe2 was rationally fabricated for efficient photocatalytic hydrogen evolution. Systematic investigations reveal that Mo-S bond and internal electric field induce the Z-scheme charge transfer mechanism as confirmed by the surface photovoltage spectra, DMPO spin-trapping electron paramagnetic resonance spectra and density functional theory calculations. Under the intense synergy among the Mo-S bond, internal electric field and S-vacancies, the optimized photocatalyst exhibits high hydrogen evolution rate of 63.21 mmol∙g−1·h−1 with an apparent quantum yield of 76.48% at 420 nm monochromatic light, which is about 18.8-fold of the pristine ZIS. This work affords a useful inspiration on consciously modulating Z-scheme charge transfer by atomic-level interface control and internal electric field to signally promote the photocatalytic performance.

Research on insulation protection of high voltage and high power confluence structure of aerospace based on electric field simulation

2021 International Conference on Electronics, Circuits and Information Engineering (ECIE) ◽

10.1109/ecie52353.2021.00010 ◽

2021 ◽

Author(s):

Zhang Yu ◽

Zhang Guoshuai ◽

Wu Jianchao ◽

Pei Xingzheng

Keyword(s):

Electric Field ◽

High Voltage ◽

High Power ◽

Field Simulation

Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽

10.3390/en14030638 ◽

2021 ◽

Vol 14 (3) ◽

pp. 638

Author(s):

Sanam SaeidNahaei ◽

Hyun-Jun Jo ◽

Sang Jo Lee ◽

Jong Su Kim ◽

Sang Jun Lee ◽

...

Keyword(s):

Solar Cell ◽

Electric Field ◽

Electric Fields ◽

Bias Voltage ◽

Tunnel Junction ◽

Photogenerated Carrier ◽

Internal Electric Field ◽

Junction Solar Cell ◽

Photoreflectance Spectroscopy ◽

Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.