On-chip “baluntennas” for differential-mode non-contact characterization of mmW/THz devices and ICs

Author(s):  
Cosan Caglayan ◽  
Kubilay Sertel
Keyword(s):  
2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Yoel Sebbag ◽  
Eliran Talker ◽  
Alex Naiman ◽  
Yefim Barash ◽  
Uriel Levy

AbstractRecently, there has been growing interest in the miniaturization and integration of atomic-based quantum technologies. In addition to the obvious advantages brought by such integration in facilitating mass production, reducing the footprint, and reducing the cost, the flexibility offered by on-chip integration enables the development of new concepts and capabilities. In particular, recent advanced techniques based on computer-assisted optimization algorithms enable the development of newly engineered photonic structures with unconventional functionalities. Taking this concept further, we hereby demonstrate the design, fabrication, and experimental characterization of an integrated nanophotonic-atomic chip magnetometer based on alkali vapor with a micrometer-scale spatial resolution and a magnetic sensitivity of 700 pT/√Hz. The presented platform paves the way for future applications using integrated photonic–atomic chips, including high-spatial-resolution magnetometry, near-field vectorial imaging, magnetically induced switching, and optical isolation.


2014 ◽  
pp. 69-92
Author(s):  
Takashi Sato ◽  
Hiromitsu Awano
Keyword(s):  

2016 ◽  
Vol 63 (8) ◽  
pp. 3205-3212 ◽  
Author(s):  
Qi Chen ◽  
Rui Ma ◽  
Wei Zhang ◽  
Fei Lu ◽  
Chenkun Wang ◽  
...  
Keyword(s):  

2021 ◽  
Vol MA2021-01 (60) ◽  
pp. 1603-1603
Author(s):  
Sajjad Janfaza ◽  
Seyedehhamideh Razavi ◽  
Arash Dalili ◽  
Mina Hoorfar

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 776 ◽  
Author(s):  
Bogdan F. Spiridon ◽  
Peter H. Griffin ◽  
John C. Jarman ◽  
Yingjun Liu ◽  
Tongtong Zhu ◽  
...  

This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high-speed and high-accuracythermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsicallyhigh thermal conductivity of the material. The results show one order of magnitude reduction inthermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porousmaterials. This achievement is encouraging in the quest for integrating sensors with opto-, powerandRF-electronics on a single GaN chip.


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