mems resonator
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Zeji Chen ◽  
Wenli Liu ◽  
Jinling Yang ◽  
Yinfang Zhu ◽  

Abstract This work presents a novel ultra-high frequency (UHF) Lamb mode Aluminum Nitride (AlN) piezoelectric resonator with enhanced quality factors (Q). With slots introduced in the vicinity of the tether support end, the elastic waves leaking from the tether sidewalls can be reflected, which effectively reduces the anchor loss while retaining size compactness and mechanical robustness. Comprehensive analysis was carried out to provide helpful guidance for obtaining optimal slot designs. For various resonators with frequencies ranging from 630 MHz to 1.97 GHz, promising Q enhancements up to 2 times have all been achieved. The 1.97 GHz resonator implemented excellent f × Q product up to 6.72 × 1012 and low motional resistance down to 340 Ω, which is one of the highest performances among the reported devices. The devices with enhanced Q values as well as compact size could have potential application in advanced RF front end transceivers.

2022 ◽  
Vol 36 (06) ◽  

The fabrication process for the designed MEMS resonator using surface-micromachined technology is presented in this paper. A 10-MHz Free-Free beam MEMS resonator is designed to vibrate in the second-mode shape, which is significant improvement compare to the fundamental mode. The design showed a Q value as high as 75,000, which is significant improvement compared to 8,400 VHF F-F beam MEMS resonator by K. Wang; and very low motional resistance (18kΩ). The surface-micromachined technology is used as the standard process for the design. The process is briefly described from the layout design to the experimental fabricated device.

AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015319
Hasnet Ahmed ◽  
Payman Rajai ◽  
Mohammed Jalal Ahamed

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 63
Jun Wu ◽  
Hideyuki Maekoba ◽  
Arnaud Parent ◽  
Tamio Ikehashi

We propose a sub-1 Hz resonance frequency MEMS resonator that can be used for seismometers. The low resonance frequency is achieved by an electrically tunable spring with an ultra-small spring constant. Generally, it is difficult to electrically fine-tune the resonance frequency at a near-zero spring constant because the frequency shift per voltage will diverge at the limit of zero spring constant. To circumvent this issue, we propose a multi-step electrical tuning method. We show by simulations that the resonance frequency can be tuned by 0.008 Hz/mV even in the sub-1 Hz region. The small spring constant, however, reduces the shock robustness and dynamic range of the seismometer. To prevent this, we employ a force-balanced method in which the mass displacement is nulled by the feedback force. We show that the displacement can be obtained from the voltage that generates the feedback force.

Zhenxi Liu ◽  
Jiamin Chen ◽  
Wuhao Yang ◽  
Tianyi Zheng ◽  
Qifeng Jiao ◽  

Abstract MEMS resonators have been widely used in the magneto-resistive (MR) sensor for modulating the magnetic flux to enhance the detection limit. However, the manufacturing tolerances in MEMS fabrication processes make it challenging to fabricate the identical resonators with the same vibration frequency, which greatly decreases the detection limit of the MR sensor. To synchronize the MEMS resonators and improve the performance of the MR sensor, the double end tuning fork (DETF) based comb-driven MEMS resonators is proposed in this paper, making the system operate at the out-of-phase mode to complete the synchronization. The dynamic behaviour of the resonators is investigated through theoretical analysis, numerical solution based on MATLAB code and Simulink, and experimental verification. The results show that the transverse capacitances in the comb will significantly affect the resonance frequency due to the second-order electrostatic spring constant. It is the first time to observe the phenomenon that the resonant frequency increases with the increase of the bias, and it can also decrease with increasing the bias through adjusting the initial space between the fixed finger and the moving mass, they are different from the model about spring softening and spring hardening. Besides, the proposed DETF-based comb-driven resonators can suppress the in-phase and out-of-phase mode through adjusting the driving and sensing ports, and sensing method, meanwhile make the magnetic flux modulation fully synchronized, and maximize the modulation efficiency, and minimize the detection limit. These characteristics are appropriate for the MR sensor, even other devices that need to adjust the resonance frequency and vibration amplitude. Furthermore, the model and the design can also be extended to characteristic the single end tuning fork (SETF) based MEMS resonator and other MEMS-based MR sensors.

2021 ◽  
pp. 113236
Bo Peng ◽  
Kai-Ming Hu ◽  
Xiao-Yong Fang ◽  
Xiu-Yuan Li ◽  
Wen-Ming Zhang

Electronics ◽  
2021 ◽  
Vol 10 (21) ◽  
pp. 2646
Ahmed Kira ◽  
Mohannad Y. Elsayed ◽  
Karim Allidina ◽  
Vamsy P. Chodavarapu ◽  
Mourad N. El-Gamal

This article presents a 6.89 MHz MEMS oscillator based on an ultra-low-power, low-noise, tunable gain/duty-cycle transimpedance amplifier (TIA) and a bulk Lamé-mode MEMS resonator that has a quality factor (Q) of 3.24 × 106. Self-cascoding and current-starving techniques are used in the TIA design to minimize the power consumption and tune the duty-cycle of the output signal. The TIA was designed and fabricated in TSMC 65 nm CMOS process technology. Its open-loop performance has been measured separately. It achieves a tunable gain between 107.9 dBΩ and 118.1 dBΩ while dissipating only 143 nW from a 1 V supply. The duty-cycle of the output waveform can be tuned from 23.25% to 79.03%. The TIA has been interfaced and wire bonded in a series-resonant oscillator configuration with the MEMS resonator and mounted in a small cavity standard package. The closed-loop performance of the whole oscillator has been experimentally measured. It exhibits a phase noise of −128.1 dBc/Hz and −133.7 dBc/Hz at 1 kHz and 1 MHz offsets, respectively.

2021 ◽  
Ying Xie ◽  
Jie Zhou ◽  
Yan Liu ◽  
Lei Wang ◽  
Yao Cai ◽  

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