Extreme Temperature Characterization of Amplifier Response up to 300 Degrees Celsius Using Integrated Heaters and On-chip Samplers

2021 ◽  
Author(s):  
Hanzhao Yu ◽  
Gyusung Park ◽  
Chris H. Kim
Keyword(s):  
Extreme Temperature ◽  
On Chip

scholarly journals Demonstration of an integrated nanophotonic chip-scale alkali vapor magnetometer using inverse design

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Yoel Sebbag ◽  
Eliran Talker ◽  
Alex Naiman ◽  
Yefim Barash ◽  
Uriel Levy
Keyword(s):  
Spatial Resolution ◽  
Near Field ◽  
Computer Assisted ◽  
Experimental Characterization ◽  
Optical Isolation ◽  
New Concepts ◽  
On Chip ◽  
The Cost ◽  
Micrometer Scale

AbstractRecently, there has been growing interest in the miniaturization and integration of atomic-based quantum technologies. In addition to the obvious advantages brought by such integration in facilitating mass production, reducing the footprint, and reducing the cost, the flexibility offered by on-chip integration enables the development of new concepts and capabilities. In particular, recent advanced techniques based on computer-assisted optimization algorithms enable the development of newly engineered photonic structures with unconventional functionalities. Taking this concept further, we hereby demonstrate the design, fabrication, and experimental characterization of an integrated nanophotonic-atomic chip magnetometer based on alkali vapor with a micrometer-scale spatial resolution and a magnetic sensitivity of 700 pT/√Hz. The presented platform paves the way for future applications using integrated photonic–atomic chips, including high-spatial-resolution magnetometry, near-field vectorial imaging, magnetically induced switching, and optical isolation.

scholarly journals Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

2015 ◽  
Vol 821-823 ◽  
pp. 781-784 ◽  
Author(s):  
Philip G. Neudeck ◽  
Liang Yu Chen ◽  
David J. Spry ◽  
Glenn M. Beheim ◽  
Carl W. Chang
Keyword(s):  
Extreme Temperature ◽  
Electrical Characterization ◽  
Testing Temperature ◽  
Ic Design ◽  
Quantitative Parameter ◽  
Medium Scale ◽  
Parameter Variations ◽  
Parameter Ranges

This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA’s on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 °C. In particular, these measurements provide quantitative parameter ranges for use in JFET IC design and simulation. Larger than expected parameter variations were observed both as a function of position across the wafer as well as a function of ambient testing temperature from 23 °C to 500 °C.

On-Chip Characterization of Statistical Device Degradation

2014 ◽  
pp. 69-92
Author(s):  
Takashi Sato ◽  
Hiromitsu Awano
Keyword(s):  
On Chip

scholarly journals Systematic Characterization of Graphene ESD Interconnects for On-Chip ESD Protection

2016 ◽  
Vol 63 (8) ◽  
pp. 3205-3212 ◽  
Author(s):  
Qi Chen ◽  
Rui Ma ◽  
Wei Zhang ◽  
Fei Lu ◽  
Chenkun Wang ◽  
...  
Keyword(s):  
Esd Protection ◽  
On Chip

(Invited) On-Chip Characterization of Microcapsules Using a Capacitive Sensor for Microencapsulation and Single-Cell Analysis Applications

2021 ◽  
Vol MA2021-01 (60) ◽  
pp. 1603-1603
Author(s):  
Sajjad Janfaza ◽  
Seyedehhamideh Razavi ◽  
Arash Dalili ◽  
Mina Hoorfar
Keyword(s):  
Single Cell ◽  
Single Cell Analysis ◽  
Capacitive Sensor ◽  
Cell Analysis ◽  
On Chip

Testing of the Mars Exploration Rovers to Survive the Extreme Thermal Environments

2007 ◽  
Vol 4 (4) ◽  
pp. 145-154
Author(s):  
Kin F. Man ◽  
Alan R. Hoffman
Keyword(s):  
Thermal Environment ◽  
Extreme Temperature ◽  
System Level ◽  
Thermal Testing ◽  
Mars Exploration ◽  
Thermal Environments ◽  
Diurnal Cycles ◽  
Operational Temperature ◽  
Science Laboratories

NASA's Mars Exploration Rover (MER) project involved delivering two mobile science laboratories (rovers) on the surface of Mars to remotely conduct geologic investigations, including characterization of a diversity of rocks and soils. The rovers were launched separately in 2003 and have been in operation on the surface of Mars since January 2004. The rovers underwent a comprehensive pre-launch environmental assurance program that included assembly/subsystem and system-level testing in the areas of dynamics, thermal, and electromagnetic (EMC), as well as venting/pressure, dust, radiation, and solid-particle (meteoroid, orbital debris) analyses. Due to the Martian diurnal cycles of extreme temperature swings, the susceptible hardware that were mounted outside of the thermal controlled zones also underwent thermal cycling qualification of their packaging designs and manufacturing processes. This paper summarizes the environmental assurance program for the MER project, with emphasis on the pre-launch thermal testing program for ensuring that the rover hardware would operate and survive the Mars surface temperature extremes. These test temperatures are compared with some of the Mars surface operational temperature measurements. Selected anomalies resulting from operating the rover hardware in the Mars extreme thermal environment are also presented.

scholarly journals On-Chip Thermal Insulation Using Porous GaN

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 776 ◽  
Author(s):  
Bogdan F. Spiridon ◽  
Peter H. Griffin ◽  
John C. Jarman ◽  
Yingjun Liu ◽  
Tongtong Zhu ◽  
...  
Keyword(s):  
Thermal Insulation ◽  
High Speed ◽  
Thermal Characterization ◽  
Semiconductor Materials ◽  
3Ω Method ◽  
Theoretical Predictions ◽  
Order Of Magnitude ◽  
On Chip ◽  
Fundamental Requirement

This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high-speed and high-accuracythermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsicallyhigh thermal conductivity of the material. The results show one order of magnitude reduction inthermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porousmaterials. This achievement is encouraging in the quest for integrating sensors with opto-, powerandRF-electronics on a single GaN chip.

Sign in / Sign up

Export Citation Format

Share Document