Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications

Author(s):  
Ramana M. Malladi ◽  
Michael McPartlin ◽  
Alvin Joseph ◽  
Hugues Lafontaine ◽  
Mark Doherty
Author(s):  
Jiangfan Liu ◽  
Cheng Cao ◽  
Yubing Li ◽  
Tao Tan ◽  
Deyang Chen ◽  
...  

2019 ◽  
Vol 29 (09) ◽  
pp. 2050152
Author(s):  
Kayvan Ahmadi ◽  
Massoud Dousti ◽  
Shahrooz Asadi

This paper presents a new extended high-efficiency-range Doherty power amplifier (DPA) with a main and only a single auxiliary amplifier. In order to extend the output high-efficiency range with a high-efficiency level, asymmetrical cells are employed as the main and auxiliary amplifiers in class-F and class-C complex combining load (CCL) methodology, respectively. To verify the proposed methodology, a DPA with 12-dB output back-off (OBO) is designed and fabricated for wideband code division multiple access (WCDMA) applications. Large-signal continuous-wave measurement results show the power gain of about 11[Formula: see text]dB with a drain efficiency of 59.9% at 12[Formula: see text]dB of OBO. A two-tone test exhibits a third-order intermodulation distortion (IMD) of lower than [Formula: see text][Formula: see text]dBc. Modulated wave measurements show over 55% of average drain efficiency and an adjacent channel leakage power ratio (ACLR) of lower than [Formula: see text][Formula: see text]dBc at an output power level of 31.5[Formula: see text]dBm.


Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 99 ◽  
Author(s):  
Ruitao Chen ◽  
Ruchun Li ◽  
Shouli Zhou ◽  
Shi Chen ◽  
Jianhua Huang ◽  
...  

This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.


2014 ◽  
Vol 28 (15) ◽  
pp. 1888-1895 ◽  
Author(s):  
Yuehang Xu ◽  
Wenli Fu ◽  
Changsi Wang ◽  
Chunjiang Ren ◽  
Haiyan Lu ◽  
...  

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