Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124)
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A highly selective passive band reject filter with low-Q lumped elements in a Si bipolar process

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886196 ◽

2002 ◽

Cited By ~ 4

Author(s):

B. Ray ◽

J.S. Hamel ◽

T. Manku ◽

J.J. Nisbet

Keyword(s):

Lumped Elements

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Analysis and compact modeling of a vertical grounded-base NPN bipolar transistor used as an ESD protection in a smart power technology

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886167 ◽

2002 ◽

Cited By ~ 2

Author(s):

G. Bertrand ◽

C. Delage ◽

M. Bafleur ◽

N. Nolhier ◽

J.M. Dorkel ◽

...

Keyword(s):

Bipolar Transistor ◽

Compact Modeling ◽

Smart Power ◽

Esd Protection

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A low-noise low-power IF amplifier with input and output impedance matching

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886175 ◽

2002 ◽

Cited By ~ 1

Author(s):

D. Coffing ◽

E. Main

Keyword(s):

Low Power ◽

Impedance Matching ◽

Low Noise ◽

Output Impedance ◽

Input And Output

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2 GHz/2 mW and 12 GHz/30 mW dual-modulus prescalers in silicon bipolar technology

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886195 ◽

2002 ◽

Cited By ~ 3

Author(s):

H. Knapp ◽

J. Bock ◽

M. Wurzer ◽

G. Ritzberger ◽

K. Aufinger ◽

...

Keyword(s):

Bipolar Technology ◽

Silicon Bipolar Technology

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A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886190 ◽

2002 ◽

Cited By ~ 8

Author(s):

G. Deboy ◽

H. Hulsken ◽

H. Mitlehner ◽

R. Rupp

Keyword(s):

High Voltage ◽

Power Device

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Transistor noise in SiGe HBT RF technology

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886206 ◽

2002 ◽

Author(s):

Guofu Niu ◽

J.D. Cressler ◽

Zhenrong Jin ◽

Shiming Zhang ◽

J.B. Juraver ◽

...

Keyword(s):

Sige Hbt

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A sub-surface metallization post-process IC module for RF technology

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886203 ◽

2002 ◽

Cited By ~ 1

Author(s):

K.T. Ng ◽

N.P. Pham ◽

B. Rejaei ◽

P.M. Sarro ◽

J.N. Burghartz

Keyword(s):

Post Process ◽

Surface Metallization

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An integrated 20 GHz SiGe bipolar differential oscillator with high tuning range

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886194 ◽

2002 ◽

Cited By ~ 4

Author(s):

K. Ettinger ◽

M. Bergmayr ◽

H. Pretl ◽

W. Thomann ◽

J. Fenk ◽

...

Keyword(s):

Tuning Range

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The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886193 ◽

2002 ◽

Cited By ~ 10

Author(s):

Seong-Mo Yim ◽

Tong Chen ◽

K.K. O

Keyword(s):

Bipolar Technology ◽

Spiral Inductors ◽

Silicon Bipolar Technology ◽

Ground Shield

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ESD robustness of a BiCMOS SiGe technology

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) ◽

10.1109/bipol.2000.886208 ◽

2002 ◽

Cited By ~ 4

Author(s):

S. Voldman ◽

P. Juliano ◽

N. Schmidt ◽

A. Botula ◽

R. Johnson ◽

...

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Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A highly selective passive band reject filter with low-Q lumped elements in a Si bipolar process

Analysis and compact modeling of a vertical grounded-base NPN bipolar transistor used as an ESD protection in a smart power technology

A low-noise low-power IF amplifier with input and output impedance matching

2 GHz/2 mW and 12 GHz/30 mW dual-modulus prescalers in silicon bipolar technology

A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices

Transistor noise in SiGe HBT RF technology

A sub-surface metallization post-process IC module for RF technology

An integrated 20 GHz SiGe bipolar differential oscillator with high tuning range

The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology

ESD robustness of a BiCMOS SiGe technology

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124)
Latest Publications