Design of a High-Efficiency GaN High-Electron Mobility Transistor Microwave Power Amplifier

This study presents a design procedure to obtain high-efficiency for microwave power amplifier. The designed amplifier uses a GaN high electron mobility transistor as an active device. Matching networks including input and output networks are realized using Megtron6 substrate microstrip lines. The designed amplifier operates at 2.1 GHz band. The simulated results show that the amplifier delivers a maximum power-added efficiency of 73.2% at output power and power gain of 47.8 dBm and 13.8 dB, respectively. This promising designed performance makes this amplifier to be an excellent candidate for use in modern wireless communication systems like radar, mobile network, and satellite communications.

РАЗРАБОТКА И ИССЛЕДОВАНИЕ ФОРМИРОВАТЕЛЕЙ ПИТАНИЯ ДЛЯ ВЫХОДНЫХ УСИЛИТЕЛЕЙ МОЩНОСТИ

Рассмотрены формирователи питания СВЧ-усилителей мощности, их основные характеристики и особенности. Приведены типовые решения подачи импульсного питания высокого напряжения и мощности в системах с GaAs УМ. Приведены результаты экспериментального исследования формирователей питания и влияния качества их выходного сигнала на выходной сигнал СВЧ УМ. The paper presents power drivers of microwave power amplifiers, as well as their main characteristics and features. Typical solutions have been presented that provide pulsed power supply of high voltage and power in GaAs power amplifiers. The results of experimental research on power drivers and their quality influence on the output signal of the microwave power amplifier have been provided.