Experiment and Simulation of Leakage Current in HVDC Cable under Different Electro-Thermal Stresses

Author(s):  
Sathyamoorthy Dhayalan ◽  
Bibhav Das ◽  
Pranav Johri ◽  
C. C. Reddy
Author(s):  
Warren J. Moberly ◽  
Daniel B. Miracle ◽  
S. Krishnamurthy

Titanium-aluminum alloy metal matrix composites (MMC) and Ti-Al intermetallic matrix composites (IMC), reinforced with continuous SCS6 SiC fibers are leading candidates for high temperature aerospace applications such as the National Aerospace Plane (NASP). The nature of deformation at fiber / matrix interfaces is characterized in this ongoing research. One major concern is the mismatch in coefficient of thermal expansion (CTE) between the Ti-based matrix and the SiC fiber. This can lead to thermal stresses upon cooling down from the temperature incurred during hot isostatic pressing (HIP), which are sufficient to cause yielding in the matrix, and/or lead to fatigue from the thermal cycling that will be incurred during application, A second concern is the load transfer, from fiber to matrix, that is required if/when fiber fracture occurs. In both cases the stresses in the matrix are most severe at the interlace.


2017 ◽  
Vol 137 (8) ◽  
pp. 481-486
Author(s):  
Junichi Hayasaka ◽  
Kiwamu Shirakawa ◽  
Nobukiyo Kobayashi ◽  
Kenichi Arai ◽  
Nobuaki Otake ◽  
...  

2010 ◽  
Vol 130 (11) ◽  
pp. 1037-1041 ◽  
Author(s):  
Takuma Miyake ◽  
Yuya Seo ◽  
Tatsuya Sakoda ◽  
Masahisa Otsubo
Keyword(s):  

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.


1999 ◽  
Vol 30 (4-6) ◽  
pp. 296-302
Author(s):  
F. V. Nedopekin ◽  
Victor K. Tolstykh ◽  
N. A. Volodin ◽  
V. V. Belousov ◽  
S. V. Gridin

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