Effect of argon plasma treatment on electronic properties of doped hydrogenated Silicon thin films for photovoltaic applications

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

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Internal structure of mixed phase hydrogenated silicon thin films made at 39°C

Applied Physics Letters ◽

10.1063/1.2244101 ◽

2006 ◽

Vol 89 (5) ◽

pp. 051922 ◽

Cited By ~ 16

Author(s):

P. C. P. Bronsveld ◽

J. K. Rath ◽

R. E. I. Schropp ◽

T. Mates ◽

A. Fejfar ◽

...

Keyword(s):

Thin Films ◽

Internal Structure ◽

Mixed Phase ◽

Hydrogenated Silicon ◽

Silicon Thin Films

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Effect of small nitrogen dilution on the microstructure of hydrogenated silicon thin films deposited by magnetron radiofrequency sputtering

Thin Solid Films ◽

10.1016/j.tsf.2003.11.307 ◽

2004 ◽

Vol 458 (1-2) ◽

pp. 86-91 ◽

Cited By ~ 1

Author(s):

S. Charvet ◽

A. Zeinert ◽

C. Gonçalves ◽

M. Goës

Keyword(s):

Thin Films ◽

Hydrogenated Silicon ◽

Silicon Thin Films ◽

Nitrogen Dilution

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Aluminum-Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films With Assistance of Electric Field for Solar Photovoltaic Applications

Journal of Display Technology ◽

10.1109/jdt.2015.2457892 ◽

2016 ◽

Vol 12 (1) ◽

pp. 82-88 ◽

Cited By ~ 2

Author(s):

Khozima Hamasha ◽

Enas Hamasha ◽

Ghassan Masadeh ◽

Adnan Shariah ◽

Mohammad M. Hamasha

Keyword(s):

Thin Films ◽

Electric Field ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Solar Photovoltaic ◽

Silicon Thin Films ◽

Photovoltaic Applications ◽

Hydrogenated Amorphous ◽

Induced Crystallization ◽

Aluminum Induced Crystallization

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A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness

Applied Surface Science ◽

10.1016/j.apsusc.2010.03.022 ◽

2010 ◽

Vol 256 (18) ◽

pp. 5667-5671 ◽

Cited By ~ 31

Author(s):

J. Müllerová ◽

L. Prušáková ◽

M. Netrvalová ◽

V. Vavruňková ◽

P. Šutta

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Hydrogenated Silicon ◽

Silicon Thin Films ◽

Amorphous Hydrogenated Silicon

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Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

10.1117/12.903747 ◽

2011 ◽

Author(s):

Jian He ◽

Wei Li ◽

Rui Xu ◽

Kang-Cheng Qi ◽

Ya-Dong Jiang

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Electronic Properties ◽

Hydrogenated Amorphous Silicon ◽

Structural Evolution ◽

Silicon Thin Films ◽

Hydrogenated Amorphous

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Optical Absorption in Co-Deposited Mixed-Phase Hydrogenated Amorphous/Nanocrystalline Silicon Thin Films

MRS Proceedings ◽

10.1557/proc-1245-a09-03 ◽

2010 ◽

Vol 1245 ◽

Cited By ~ 2

Author(s):

Lee Wienkes ◽

Aaron Besaw ◽

Curtis Anderson ◽

David Bobela ◽

Paul Stradins ◽

...

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Absorption Spectra ◽

Defect Density ◽

Amorphous Material ◽

Nanocrystalline Silicon ◽

Esr Spectra ◽

Hydrogenated Silicon ◽

Silicon Thin Films ◽

Electron Donation

AbstractThe conductivity of amorphous/nanocrystalline hydrogenated silicon thin films (a/nc-Si:H) deposited in a dual chamber co-deposition system exhibits a non-monotonic dependence on the nanocrystal concentration. Optical absorption measurements derived from the constant photocurrent method (CPM) and preliminary electron spin resonance (ESR) data for similarly prepared materials are reported. The optical absorption spectra, in particular the subgap absorption, are found to be independent of nanocrystalline density for relatively small crystal fractions (< 4%). For films with a higher crystalline content, the absorption spectra indicate broader Urbach slopes and higher midgap absorption. The ESR spectra show an approximately constant defect density across all of the films. These data are interpreted in terms of a model involving electron donation from the nanocrystals into the amorphous material.

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