Backward Raman pulse compression of KrF laser using transient Raman scattering for the generation of high-power and high-energy UV laser pulse

Author(s):  
E. Takahashi ◽  
Y. Matsumoto ◽  
I. Okuda ◽  
S. Kato ◽  
Y. Owadano ◽  
...  
2009 ◽  
Vol 17 (26) ◽  
pp. 23809 ◽  
Author(s):  
D. H. Martz ◽  
H. T. Nguyen ◽  
D. Patel ◽  
J. A. Britten ◽  
D. Alessi ◽  
...  

1999 ◽  
Vol 17 (2) ◽  
pp. 275-280 ◽  
Author(s):  
K. KUWAHARA ◽  
E. TAKAHASHI ◽  
Y. MATSUMOTO ◽  
Y. OWADANO

We are working on the generation of the high-power UV pulse by backward Raman pulse amplification. This report deals with the generation of the high-power backward first Stokes light using a simple focusing geometry. The high-power Stokes light, which grows from spontaneous scattered light in the focal region, can be obtained by focusing the high-energy KrF pump pulse into a Raman cell filled with methane gas. The intensity of the pump pulse increases significantly near the focus. This pulse produces a serious effect of the nonlinear refractive index. We mixed xenon gas into the Raman medium to compensate for this effect. As a result, a stable generation of the high-power single backward first Stokes light can be obtained.


2013 ◽  
Vol 111 (1) ◽  
pp. 75-87 ◽  
Author(s):  
T. Auguste ◽  
C. Fourcade Dutin ◽  
A. Dubrouil ◽  
O. Gobert ◽  
O. Hort ◽  
...  

2003 ◽  
Vol 31 (12) ◽  
pp. 854-859
Author(s):  
Kyoichi DEKI ◽  
Fumiaki MATSUOKA ◽  
Kazuyoku TEI ◽  
Takashi ARISAWA

2016 ◽  
Vol 42 (2) ◽  
pp. 113-134 ◽  
Author(s):  
A. V. Bogatskaya ◽  
E. A. Volkova ◽  
A. M. Popov ◽  
I. V. Smetanin

Author(s):  
G. Cristoforetti ◽  
L. Antonelli ◽  
D. Mancelli ◽  
S. Atzeni ◽  
F. Baffigi ◽  
...  

Laser–plasma interaction (LPI) at intensities $10^{15}{-}10^{16}~\text{W}\cdot \text{cm}^{-2}$ is dominated by parametric instabilities which can be responsible for a significant amount of non-collisional absorption and generate large fluxes of high-energy nonthermal electrons. Such a regime is of paramount importance for inertial confinement fusion (ICF) and in particular for the shock ignition scheme. In this paper we report on an experiment carried out at the Prague Asterix Laser System (PALS) facility to investigate the extent and time history of stimulated Raman scattering (SRS) and two-plasmon decay (TPD) instabilities, driven by the interaction of an infrared laser pulse at an intensity ${\sim}1.2\times 10^{16}~\text{W}\cdot \text{cm}^{-2}$ with a ${\sim}100~\unicode[STIX]{x03BC}\text{m}$ scalelength plasma produced from irradiation of a flat plastic target. The laser pulse duration (300 ps) and the high value of plasma temperature ( ${\sim}4~\text{keV}$ ) expected from hydrodynamic simulations make these results interesting for a deeper understanding of LPI in shock ignition conditions. Experimental results show that absolute TPD/SRS, driven at a quarter of the critical density, and convective SRS, driven at lower plasma densities, are well separated in time, with absolute instabilities driven at early times of interaction and convective backward SRS emerging at the laser peak and persisting all over the tail of the pulse. Side-scattering SRS, driven at low plasma densities, is also clearly observed. Experimental results are compared to fully kinetic large-scale, two-dimensional simulations. Particle-in-cell results, beyond reproducing the framework delineated by the experimental measurements, reveal the importance of filamentation instability in ruling the onset of SRS and stimulated Brillouin scattering instabilities and confirm the crucial role of collisionless absorption in the LPI energy balance.


2007 ◽  
Vol 131-133 ◽  
pp. 479-484 ◽  
Author(s):  
Vladimir A. Volodin ◽  
M.D. Efremov ◽  
G.A. Kachurin ◽  
S.A. Kochubei ◽  
A.G. Cherkov ◽  
...  

Thin (90 nm) a-Si:H films on Corning 7059 glass substrates have been crystallized by 120 fs pulses of Ti:sapphire and nanosecond pulse XeCl and KrF excimer lasers. Initial films were deposited using low-temperature plasma enhanced deposition technique. The structural properties of the films were characterized using the spectroscopy of Raman scattering, excited by the argon laser (line 514.5 nm) and using electron microscopy. For the femtosecond pulse treatments the ablation threshold was found to be some more than 65 mJ/cm2. When pulse energy density was lower than ~30 mJ/cm2 no structural changes were observed. In optimal regimes the films were found to be fully crystallized with needle grain structure, according to the Raman scattering and electron microscopy data. Estimates show the pulse energy density was lower than the Si melting threshold, so non-thermal “explosive” impacts may play some role. The main result in nanosecond XeCl and KrF laser pulse crystallization is the narrower window between beginning of crystallization and ablation for KrF laser (wavelength 248 nm) than for the XeCl laser (wavelength 308 nm). So, the possibility of the femtosecond and nanosecond laser pulses to crystallize a-Si films on non refractory glass substrates was shown. The results obtained are of great importance for manufacturing of polycrystalline silicon layers on non-refractory large-scale substrates for giant microelectronics.


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